TITLE

Epitaxial growth and Ohmic contacts in MgxZn1-xO/TiN/Si(111) heterostructures

AUTHOR(S)
Chunming Jin; Wei Wei; Honghui Zhou; Tsung-Han Yang; Narayan, Roger J.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p251102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, the electronic properties of Mg0.1Zn0.9O/TiN/Si(111) heterostructures processed using pulsed laser deposition were examined. X-ray diffraction and transmission electron microscopy studies demonstrated epitaxial growth of the titanium nitride buffer layer and the Mg0.1Zn0.9O thin film. Transmission electron microscopy demonstrated a thin (∼5 nm) spinel layer along the magnesium zinc oxide/titanium nitride interface. Current-voltage measurements revealed Ohmic contact behavior through the magnesium zinc oxide/titanium nitride interface. These results suggest that the titanium nitride buffer layer in the MgxZn1-xO/TiN/Si(111) heterostructure provides a buffer layer for integrating magnesium zinc oxide thin films with silicon substrates, which both enable epitaxial growth and serve as an Ohmic electrode for the magnesium zinc oxide thin film.
ACCESSION #
36197995

 

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