TITLE

Epitaxial growth of GaN films grown on single crystal Fe substrates

AUTHOR(S)
Okamoto, K.; Inoue, S.; Matsuki, N.; Kim, T.-W.; Ohta, J.; Oshima, M.; Fujioka, H.; Ishii, A.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p251906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN films have been grown on single crystalline Fe(110), Fe(100), and Fe(111) substrates with low-temperature AlN buffer layers by the use of pulsed laser deposition. AlN films with 30° rotated domains and polycrystalline AlN films grow on Fe(100) and Fe(111), respectively. On the other hand, AlN(0001) films grow epitaxially on Fe(110) substrates. X-ray reflectivity measurements have revealed that the heterointerface of AlN/Fe(110) is quite abrupt and that its abruptness remains unchanged, even after annealing at 700 °C. GaN epitaxial films have been grown on AlN/Fe(110) structures with an in-plane relationship of GaN[11-20]∥AlN[11-20]∥Fe[001]. The first-principles calculations have revealed that this in-plane epitaxial relationship is determined by the adsorption process of nitrogen atoms on the Fe surfaces at the initial stage of the growth.
ACCESSION #
36197972

 

Related Articles

  • Growth of epitaxial GaN films by pulsed laser deposition. Vispute, R.D.; Talyansky, V.; Sharma, R.P.; Choopun, S.; Downes, M.; Venkatesan, T.; Jones, K.A.; Iliadis, A.A.; Khan, M. Asif; Yang, J.W. // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p102 

    Examines the growth of crystalline quality epitaxial gallium nitride thin films by pulsed laser deposition. Generation of an x-ray diffraction rocking curve linewidth; Indication of the crystallinity degree by the ion channeling minimum yield; Reflection of gallium desorption in a decreasing...

  • Epitaxial growth of GaN thin film on sapphire with a thin ZnO buffer layer by liquid target... Sun, X. W.; Xiao, R. F. // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5776 

    Focuses on a study which focused on the epitaxial growth of gallium nitride thin films deposited on sapphire(0001) substrates with a thin zinc oxide buffer layer by a liquid target pulsed laser deposition technique. Experimental details; Crystal structures; Photoluminescence measurement of the...

  • Epitaxial growth of GaN on copper substrates. Inoue, S.; Okamoto, K.; Matsuki, N.; Tae-Won Kim; Fujioka, H. // Applied Physics Letters;6/26/2006, Vol. 88 Issue 26, p261910 

    We have grown GaN films on Cu(111) substrates using pulsed laser deposition. We have found that GaN(0001) grows epitaxially on Cu(111) when employing low temperature grown AlN buffer layers with an in-plane epitaxial relationship of AlN[1120]∥Cu[110] Reflection high-energy electron...

  • Effects of ZnO buffer layers on the fabrication of GaN films using pulsed laser deposition. Man, B. Y.; Yang, C.; Zhuang, H. Z.; Liu, M.; Wei, X. Q.; Zhu, H. C.; Xue, C. S. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p093519 

    GaN thin films were deposited on Si (111) substrates using ZnO buffer layers by pulsed laser deposition of a GaN target in a nitrogen atmosphere. High-quality GaN thin films were obtained after annealing at 950 °C for 15 min in a NH3 atmosphere. The crystalline quality, composition, and...

  • Persistent two-dimensional growth of (110) manganite films. Bachelet, R.; Pesquera, D.; Herranz, G.; Sánchez, F.; Fontcuberta, J. // Applied Physics Letters;9/20/2010, Vol. 97 Issue 12, p121904 

    We have deposited La2/3Sr1/3MnO3(110) thin films by pulsed laser deposition, changing the ratio of surface diffusivity to deposition flux (D/F) by adjusting substrate temperature and laser repetition rate. We show that persistent two-dimensional layer-by-layer growth, at least up to 30 nm, can...

  • Step-flow growth mode instability of N-polar GaN under N-excess. Chèze, C.; Sawicka, M.; Siekacz, M.; Turski, H.; Cywinski, G.; Smalc-Koziorowska, J.; Weyher, J. L.; Krysko, M.; Łucznik, B.; Bockowski, M.; Skierbiszewski, C. // Applied Physics Letters;8/12/2013, Vol. 103 Issue 7, p071601 

    GaN layers were grown on N-polar GaN substrates by plasma-assisted molecular beam epitaxy under different III/V ratios. Ga-rich conditions assure step-flow growth with atomically flat surface covered by doubly-bunched steps, as for Ga-polar GaN. Growth under N-excess however leads to an unstable...

  • Role of atomic arrangements at interfaces on the phase control of epitaxial TiO[sub 2] films. Park, B. H.; Huang, J. Y.; Li, L. S.; Jia, Q. X. // Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1174 

    Epitaxial rutile-TiO[SUB 2] and anatase-TiO[SUB 2] films were grown at 800°C on Al[SUB 2]O[SUB 3](1102) and LaAlO[SUB 3](001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The...

  • Magnetotransport of La[sub 0.7]Sr[sub 0.3]MnO[sub 3]/SrTiO[sub 3] multilayers with ultrathin manganite layers. Do¨rr, K.; Walter, T.; Sahana, M.; Mu¨ller, K.-H.; Nenkov, K.; Brand, K.; Schultz, L. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6973 

    The thickness dependence of electrical transport and magnetization of ultrathin La[sub 0.7]Sr[sub 0.3]MnO[sub 3] films has been investigated using epitaxial La[sub 0.7]Sr[sub 0.3]MnO[sub 3](LSMO)/SrTiO[sub 3] multilayers prepared by pulsed laser deposition. Layer thicknesses range from 1.9 to 10...

  • Enhanced conductivity in pulsed laser deposited Ce0.9Gd0.1O2-δ/SrTiO3 heterostructures. Kant, K. Mohan; Esposito, V.; Pryds, N. // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p143110 

    Significant enhancement in the electrical conductivity of Ce0.9Gd0.1O2-δ (CGO) thin films (250 and 500 nm) deposited on MgO(001) substrate is observed by introducing ∼50 nm thin SrTiO3 buffer layer film. Introduction of the buffer layer is found to form epitaxial films, leading to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics