Electrical-modulated magnetoresistance in multi-p-n heterojunctions of La0.9Sr0.1MnO3 and oxygen-vacant SrTiO3-δ on Si substrates

Kun Zhao; Kui-Juan Jin; Hui-Bin Lu; Meng He; Yan-Hong Huang; Guo-Zhen Yang; Jiandi Zhang
December 2008
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252110
Academic Journal
The electrical modulation of the magnetoresistance (MR) from -70% to 80% under a small magnetic field of 200 Oe near room temperature is found in multi-p-n heterostructures of SrTiO3-δ/La0.9Sr0.1MnO3/SrTiO3-δ/La0.9Sr0.1MnO3/Si we fabricated. The mechanism causing the modulation of MR by applied bias is proposed as the interface competition effect in the multilayer heterojunctions. Our results of the present structure are expected to meet the high desire for the application of large electronic modulation of MR near room temperature.


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