A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

Yang, Y.; Sun, X. W.; Tay, B. K.; You, G. F.; Tan, S. T.; Teo, K. L.
December 2008
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p253107
Academic Journal
We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p-type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped and undoped single ZnO NRs were probed using nanomanipulator, where the former ones showed good rectification characteristics, confirming the formation of p-n homojunctions by ion implantation. Distinct EL emissions in UV and red regions were observed at room temperature under forward bias, where the emission intensity shows amplified spontaneous emission characteristics, suggesting high efficiency of these LEDs.


Related Articles

  • Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes. Zhang, S. G.; Zhang, X. W.; Yin, Z. G.; Wang, J. X.; Dong, J. J.; Gao, H. L.; Si, F. T.; Sun, S. S.; Tao, Y. // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p181116 

    We demonstrate the surface plasmon (SP) enhanced n-ZnO/AlN/p-GaN light-emitting diodes (LEDs) by inserting the Ag nanoparticles (NPs) between the ZnO and AlN layers. The ultraviolet/violet near band edge emission of the device is significantly enhanced while the green defect-related emission is...

  • Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodes. Han-Ki Kim; Kyu-Sung Lee; Kwon, J. H. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p012103 

    We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 Ω/cm and average transmittance above 88% in visible range were...

  • Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions. Bo Ling; Jun Liang Zhao; Xiao Wei Sun; Swee Tiam Tan; Aung Ko Ko Kyaw; Divayana, Yoga; Zhi Li Dong // Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p013101 

    Wide-range color tuning from red to blue was achieved in phosphor-free p+-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p+-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p+-Si/p-CuAlO2...

  • Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode. Bulashevich, Kirill A.; Evstratov, Igor Yu.; Nabokov, Vladislav N.; Karpov, Sergey Yu. // Applied Physics Letters;12/12/2005, Vol. 87 Issue 24, p243502 

    Using simulations, we have examined specific features of a hybrid n-ZnO/p-AlGaN light-emitting diode (LED) operation, originated from a type-II band alignment and a negative polarization charge at the ZnO/AlGaN interface. These factors are found to improve the carrier confinement near the...

  • Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition. Kim, H. S.; Lugo, F.; Pearton, S. J.; Norton, D. P.; Yu-Lin Wang; Ren, F. // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112108 

    ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/Zn0.9Mg0.1O/ZnO/Zn0.9Mg0.1O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low...

  • Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer. Wang, T.; Wu, H.; Zheng, H.; Wang, J. B.; Wang, Z.; Chen, C.; Xu, Y.; Liu, C. // Applied Physics Letters;4/8/2013, Vol. 102 Issue 14, p141912 

    Nonpolar m-plane ZnO films are deposited on GaN (0002) with a 10 nm Al2O3 interlayer by atomic layer deposition. The growth direction of the ZnO films directly on GaN (0002) is [formula] (perpendicular to ([formula]) plane), whereas with the Al2O3 interlayer it changes into [formula]. With the...

  • Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping. Echresh, Ahmad; Chey, Chan Oeurn; Shoushtari, Morteza Zargar; Nur, Omer; Willander, Magnus // Journal of Applied Physics;2014, Vol. 116 Issue 19, p193104-1 

    We have fabricated, characterized, and compared ZnO nanorods/p-GaN and n-Zn0.94Ag0.06O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed an obvious rectifying behaviour of both LEDs. A reduction of the optical band gap of the Zn0.94Ag0.06O nanorods compared to pure...

  • Influence of Erbium Ion Implantation Dose on Characteristics of (111) Si:(Er, O) Light-Emitting Diodes Operating in p�n-Junction Breakdown Mode. Sobolev, N. A.; Emel�yanov, A. M.; Nikolaev, Yu. A. // Semiconductors;Sep2000, Vol. 34 Issue 9, p1027 

    Characteristics of Si:(Er, O) light-emitting diodes (LEDs) fabricated by ion implantation on singlecrystal (111) Si substrates and operating under the conditions of avalanche or tunneling breakdown of the p-n junction were studied. The Er[sup 3+] electroluminescence (EL) intensity depends...

  • Si:Si LEDs with room-temperature dislocation-related luminescence. Sobolev, N.; Kalyadin, A.; Konovalov, M.; Aruev, P.; Zabrodskiy, V.; Shek, E.; Shtel'makh, K.; Mikhaylov, A.; Tetel'baum, D. // Semiconductors;Feb2016, Vol. 50 Issue 2, p240 

    Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si, the EL is quenched at temperatures higher...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics