TITLE

Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials

AUTHOR(S)
Jeong, Jeung-hyun; Ahn, Hyung-Woo; Lee, Suyoun; Kim, Won Mok; Ha, Jae-Geun; Cheong, Byung-ki
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p011902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A semiquantitative characterization of the interfacial adhesion of phase change materials is developed, which consists of determining critical adhesion temperature (TCA) via measuring the probability of adhesion failure with temperature using patterned films. By comparison of TCA values, Ge-doped SbTe (Ge-ST) is shown to have weaker adhesion than Ge2Sb2Te5 (GST), which results from its limited ability in relaxation of crystallization-induced stress. Nitrogen or oxygen doping in Ge-ST produces significant increase in TCA, close to that of GST. This improvement is due to smaller grain size of N-/O-doped Ge-ST, which facilitates the relaxation of the stress via grain boundary diffusion or sliding.
ACCESSION #
36178267

 

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