Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Chen, Peng; Chen, Winnie V.; Yu, Paul K. L.; Tang, Chak Wah; Lau, Kei May; Mawst, Luke; Paulson, Charles; Kuech, T. F.; Lau, S. S.
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p012101
Academic Journal
Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferred surface flatness for device processing. After transfer, the dark current under the reverse bias increased by ∼50 times over that of the as-grown photodiodes at -1.5 V, while the photoinduced current was comparable to that of the as-grown sample. These results were discussed in terms of interactions between minority carriers and the remaining implantation-induced damage.


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