TITLE

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

AUTHOR(S)
Chen, Peng; Chen, Winnie V.; Yu, Paul K. L.; Tang, Chak Wah; Lau, Kei May; Mawst, Luke; Paulson, Charles; Kuech, T. F.; Lau, S. S.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p012101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferred surface flatness for device processing. After transfer, the dark current under the reverse bias increased by ∼50 times over that of the as-grown photodiodes at -1.5 V, while the photoinduced current was comparable to that of the as-grown sample. These results were discussed in terms of interactions between minority carriers and the remaining implantation-induced damage.
ACCESSION #
36178254

 

Related Articles

  • New silicon-based fibre assemblies for applications in integrated optics and optical MEMS. Hoffmann, M.; Voges, E. // Applied Physics B: Lasers & Optics;2001, Vol. 73 Issue 5/6, p629 

    Nearly closed rhombus-shaped channels in micromachined silicon with very high accuracy for fibre array assemblies are presented. The fabrication and the assembly of fibres are described. The achieved accuracy is comparable with conventional V-groove assemblies. Additionally, rhombus-shaped...

  • Physical mechanisms behind the ion-cut in hydrogen implanted silicon. Ho¨chbauer, T.; Misra, A.; Nastasi, M.; Mayer, J. W. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2335 

    Hydrogen implanted silicon has been shown to cleave upon annealing, thus facilitating the transfer of thin silicon slices to other substrates, a process known as "ion-cut." In our experiments 〈100〉 silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging...

  • Effect of outermost layers on resonant cavity enhanced devices. Il-Sug Chung; Yong Tak Lee; Jae-Eun Kim; Hae Yong Park // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2423 

    Both the reflectivity and the reflection delay of a quarter wave mirror (QWM) can be controlled by choosing the outermost layer of the QWM appropriately. For a GaAs/Al0.75Ga0.25As QWM, depositing a Si layer as the incoming outermost layer decreases the reflectivity to the same degree as removing...

  • Formation of Two-Dimensional Photonic-Crystal Structures in Silicon for Near-Infrared Region Using Fine Focused Ion Beams. Vyatkin, A.F.; Gavrilin, E. Yu.; Gorbatov, Yu. B.; Starkov, V.V.; Sirotkin, V.V. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p32 

    One of the two variants of producing two-dimensional photonic crystals in silicon is the formation of ordered macropore structures in a silicon substrate. The characteristic pore dimensions (the diameter and the wall thickness between pores) determine the wavelength range in which such a pore...

  • Suppression of acceptor deactivation in silicon by argon-ion implantation damage. Ashok, S.; Srikanth, K. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1491 

    Presents information on a study which discussed the permeation of atomic hydrogen in silicon (Si) damaged with argon (Ar) implantation. Approach to ion beam damage of Si surface by implanting Ar in a commercial ion implanter; Trend in acceptor deactivation with Ar implantation; Key effects...

  • Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs. Cho, Hoon Young; Kim, Eun Kyu; Lee, Ho Sub; Min, Suk-Ki // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1690 

    Discusses a study which investigated hydrogenation effects on silicon- and beryllium-ion-implanted GaAs exposed to the hydrogen plasma. Change in electron mobilities that occurred in the sample hydrogenated for 60 minutes at room temperature; Factor responsible for defect and impurity...

  • Hydrogen interaction with implantation induced point defects in p-type silicon. Fatima, S.; Jagadish, C. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2562 

    Presents information on a study which investigated the hydrogen interaction with implantation induced point defects and impurities in p-type silicon using deep level transient spectroscopy. Experimental details; Results and discussion.

  • Tiny Mirrors Could Reflect Optical Future. Iler, David // Multichannel News;11/27/2000, Vol. 21 Issue 48, p184 

    Features the technology called Micro Electro-Mechanical Systems or MEMS involved in optical-networking companies. Focus of the technology on an optical-network switch application; Potential applications of the technology; MEMS-based optical switches introduced by Nortel Networks and Lucent...

  • Optical MEMS answer high-speed networking requirements. Bishop, David John; Aksyuk, Vladimir A. // Electronic Design;04/05/99, Vol. 47 Issue 7, p85 

    Focuses on the application of silicon microelectromechanical-systems (MEMS) technology on optical networking in United States. Development of data traffic; Comparison between cost of fiber-optic and copper-based technology; Context of MEMS; Principle of optical switch; Minimization of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics