Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature

Zhou, Hai; Fang, Guojia; Yuan, Longyan; Wang, Chong; Yang, Xiaoxia; Huang, Huihui; Zhou, Conghua; Zhao, Xingzhong
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p013503
Academic Journal
n-ZnO/p-silicon nanowire (SiNW) photodiodes were prepared by radio frequency reactive magnetron sputtering of n-type zinc oxide at room temperature on photoresist filled p-SiNWs, which were fabricated by electroless metal deposition method at 323 K. Our n-ZnO/p-SiNW photodiodes showed good temperature- and light-intensity dependence. They exhibited strong responsivities of 19.2 and 2.5 A/W for 254 and 1000 nm photons, respectively, under a reverse bias of 2 V with a strong peak of responsivity near 390 nm, the wavelength corresponding to the band gap of ZnO. These results present potential applications of n-ZnO/p-SiNW photodetectors in deep ultraviolet and near infrared regions.


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