TITLE

Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices

AUTHOR(S)
Moss, D. M.; Akimov, A. V.; Kent, A. J.; Glavin, B. A.; Kappers, M. J.; Hollander, J. L.; Moram, M. A.; Humphreys, C. J.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p011909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The femtosecond optical pump-probe technique is used to generate and detect the coherent acoustic vibrations with a frequency 0.83×1012 Hz in polar (0001) and semipolar (1122) InGaN/GaN superlattices. The measured amplitude of the vibrations in the semipolar sample is about five times smaller that in the polar one. Analysis of the experimental data and theoretical estimates suggest that, in addition to piezoelectric, deformation potential provides essential contribution to both generation and detection of vibrations, especially in the semipolar superlattice.
ACCESSION #
36178233

 

Related Articles

  • Ratchet effects in quantum wells with a lateral superlattice. Ivchenko, E.; Ganichev, S. // JETP Letters;Aug2011, Vol. 93 Issue 11, p673 

    Experimental and theoretical works on the ratchet effects in quantum wells with a lateral superlattice excited by alternating electric fields of terahertz frequency range has been reviewed. We discuss the Seebeck ratchet effect and helicity driven photocurrents and show that the photocurrent...

  • Piezoresistive effect in AIN/GaN short range superlattice structures. Gaska, R.; Shur, M.S. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6932 

    Reports on a strong piezoresistive effect in aluminum nitride (AlN)-gallium nitride (GaN) short-range superlattices. Correlation between the increase in the gauge factor (GF) and the increase in aluminum content; Dynamic and static piezoresistive effect in n-type GaN layers; Use of low pressure...

  • Escape time model for the current self-oscillation frequencies. in weakly coupled semiconductor superlattices. Rogozia, M.; Grahn, H.T. // Applied Physics A: Materials Science & Processing;2001, Vol. 73 Issue 4, p459 

    A semiclassical model was developed to predict the frequencies of current self-oscillations in weakly coupled semiconductor superlattices (SLs). The calculated frequency is derived from the classical round trip time in one well and the tunneling probability through the barrier, using the well...

  • Terahertz emission from GaN-based nanophononic structures: the nexus between scale and frequency. Jeong, H.; Jho, Y. D. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p439 

    We report a newly-found terahertz generation mechanism related with acoustic standing waves confined within GaN-based piezoelectric layers and its frequency control by adapting relevant active layer thicknesses.

  • Low-Frequency Noise Properties of GaN Nanowires. Li, L. C.; Huang, K. H.; Suen, Y. W.; Hsieh, W. H.; Chen, C. D.; Lee, M. W.; Chen, C. C. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p731 

    We report the temperature (T) dependance (77K to 300K) of the low-frequency electric noise of GaN nanowires. Our results show that these GaN nanowires exhibit the 1/f-like excess noise. A Lorentzian-like feature is observed embedded in the 1/f noise when the applied bias current is large enough....

  • Experimental study of a fourth-harmonic gyromultiplier. Bandurkin, I. V.; Bratman, V. L.; Savilov, A. V.; Samsonov, S. V.; Volkov, A. B. // Physics of Plasmas;Jul2009, Vol. 16 Issue 7, p070701 

    Simultaneous generation at the second and fourth cyclotron harmonics has been obtained from a single-cavity self-excited gyromultiplier. Output power of the short-wavelength radiation amounts to 100 W at a frequency of 75 GHz. The proposed scheme seems to be promising for the terahertz frequency...

  • X-ray microfabrication and measurement of a terahertz mode converter. Chang, T. H.; Shew, B. Y.; Wu, C. Y.; Chen, N. C. // Review of Scientific Instruments;May2010, Vol. 81 Issue 5, p054701 

    Mode converters are critical for frequency-tunable terahertz gyrotrons. This study reports the development of a broadband TE02 mode converter centered at 0.2 THz. An octafeed sidewall coupling structure was employed and the mode purity was analyzed. The converter was built using the technique of...

  • Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods. Rauter, P.; Fromherz, T.; Winnerl, S.; Zier, M.; Kolitsch, A.; Helm, M.; Bauer, G. // Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p261104 

    The molecular beam epitaxial (MBE) fabrication of blocked-impurity-band detectors (BIB) has been a technologically complex and delicate matter ever since its demonstration in silicon, and has not been adapted for other material systems offering detection onsets at lower terahertz frequencies. We...

  • Tunable terahertz metamaterial based on resonant dielectric inclusions with disturbed Mie resonance. Kozlov, D.; Odit, M.; Vendik, I.; Roh, Young-Geun; Cheon, Sangmo; Lee, Chang-Won // Applied Physics A: Materials Science & Processing;Mar2012, Vol. 106 Issue 3, p465 

    Tunable metamaterial operating in terahertz (THz) frequency range based on dielectric cubic particles with deposited conducting resonant strip was investigated. The frequency of the first magnetic type Mie resonance depends on the electric length of the strip. It can be changed under...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics