On dielectric breakdown in silicon-rich silicon nitride thin films

Habermehl, S.; Apodaca, R. T.; Kaplar, R. J.
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p012905
Academic Journal
Observations of dielectric breakdown in Si-rich silicon nitride indicate that it is initiated by threshold field trap ionization. The films exhibit the charge transport mechanism of Poole–Frenkel emission with a compositionally dependent ionization potential ranging from 0.58 to 1.22 eV. Similar to silicon oxynitride, the barrier lowering energy at the point of dielectric breakdown is correlated with within ∼2kT of the ionization potential, thus revealing a dual role for bulk traps in the film: regulating charge transport and retarding hot electron generation. Additionally, a semiempirical expression is developed that accurately predicts the compositional dependence of the breakdown field.


Related Articles

  • Thermofield Cr+→Cr2+ recharging resulting in anomalous intensification of Cr2+ emission in ZnS:Cr thin-film electroluminescent structures. Vlasenko, N. A.; Oleksenko, P. F.; Denisova, Z. L.; Mukhlyo, M. A.; Veligura, L. I. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2007, Vol. 10 Issue 3, p87 

    For the first time, an anomalous strong increase of the Cr2+ emission intensity (I) with increasing the applied voltage (V) has been discovered in ZnS:Cr thin-film electroluminescent structures (TFELS) instead of the I(V) dependence saturation typical of TFELS of the MISIM type, where M is an...

  • Multiphonon Ionization of Deep Centers in Amorphous Silicon Nitride: Experiment and Numerical Simulations. Nasyrov, K. A.; Novikov, Yu. N.; Gritsenko, V. A.; Yoon, S. Y.; Kim, C. W. // JETP Letters;4/10/2003, Vol. 77 Issue 7, p385 

    The conductivity of amorphous silicon nitride has been studied experimentally in a wide range of electric fields and temperatures. The experimental results are in a quantitative agreement with the theory of multiphonon ionization of deep centers for the bipolar model of conductivity. The best...

  • Study of electrical breakdown induced by pulsed CO2 laser radiation. Yoshida, S.; Kubodera, S.; Sakai, T.; Ozaki, R.; Uchiyama, T. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p1904 

    Presents a study which triggered electrical breakdown streamers in atmospheric air by carbon dioxide laser-induced ionization. Experiment; Result; Discussion.

  • Avalanche breakdown-related electroluminescence in single crystal Si:Er:O. Sobolev, N.A.; Emel'yanov, A.M. // Applied Physics Letters;10/6/1997, Vol. 71 Issue 14, p1930 

    Investigates avalanche breakdown-related electroluminescence (EL) in single crystal silicon:erbium:oxygen. Implication of proton-neutron junction avalanche breakdown for ionization; Effects of a temperature increase on the EL intensity of the crystal; Information on the room-temperature yield...

  • Temperature dependence of impact ionization in AlGaN–GaN heterostructure field effect transistors. Dyakonova, N.; Dickens, A.; Shur, M. S.; Gaska, R.; Yang, J. W. // Applied Physics Letters;5/18/1998, Vol. 72 Issue 20 

    We report on the studies of the impact ionization in AlGaN–GaN heterostructure field effect transistors in the temperature range 17–43 °C. The results show that the breakdown voltage and the characteristic electrical field E[sub i] of the impact ionization have a positive...

  • Growth of organic ultrathin films studied by Penning ionization electron and ultraviolet photoelectron spectroscopies: Pentacene. Ozaki, Hiroyuki // Journal of Chemical Physics;10/15/2000, Vol. 113 Issue 15 

    Penning ionization electron spectroscopy was applied to ultrathin pentacene films [monolayer (0.3 nm thick) to dozens of layers] prepared by vapor deposition under different conditions. Remarkable differences were found among the Penning ionization electron spectra (PIES). The local electron...

  • Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures. Prokhorov, Eugenio F.; González-Hernández, Jesus; Gorev, Nikolai B.; Kodzhespirova, Inna F.; Kovalenko, Yury A. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p327 

    The distribution of the electric field in planar GaAs structures made up of a thin film and semi-insulating compensated substrate is considered allowing for the impact ionization of deep traps in the substrate near the film-substrate interface. It is shown that there exists a critical film...

  • Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C. Tiggelaar, R. M.; Groenland, A. W.; Sanders, R. G. P.; Gardeniers, J. G. E. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    The results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C are described. Current density versus electrical field characteristics are measured as a function of temperature for 100 and 200 nm thick...

  • Design and tests of the new partially ionized beam source. Koh, S.K.; Jang, H.G.; Choi, W.K.; Jung, H.-J.; Kondranine, S.G.; Kralkina, E.A. // Review of Scientific Instruments;Dec1996, Vol. 67 Issue 12, p4114 

    Describes a partially ionized beam (PIB) source to deposit high quality copper films. How the crucible and ionization parts are spaced in one cylindrical shell to make its structure compact; Getting a uniform beam profile; Characteristics of the PIB source; Voltage-ampere characteristics of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics