TITLE

On dielectric breakdown in silicon-rich silicon nitride thin films

AUTHOR(S)
Habermehl, S.; Apodaca, R. T.; Kaplar, R. J.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p012905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observations of dielectric breakdown in Si-rich silicon nitride indicate that it is initiated by threshold field trap ionization. The films exhibit the charge transport mechanism of Poole–Frenkel emission with a compositionally dependent ionization potential ranging from 0.58 to 1.22 eV. Similar to silicon oxynitride, the barrier lowering energy at the point of dielectric breakdown is correlated with within ∼2kT of the ionization potential, thus revealing a dual role for bulk traps in the film: regulating charge transport and retarding hot electron generation. Additionally, a semiempirical expression is developed that accurately predicts the compositional dependence of the breakdown field.
ACCESSION #
36178216

 

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