Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Xu, Jiuru; Schubert, Martin F.; Noemaun, Ahmed N.; Zhu, Di; Kim, Jong Kyu; Schubert, E. Fred; Kim, Min Ho; Chung, Hun Jae; Yoon, Sukho; Sone, Cheolsoo; Park, Yongjo
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p011113
Academic Journal
Blue light-emitting diodes (LEDs) with polarization-matched GaInN/GaInN multi-quantum-well (MQW) active regions are grown by metal-organic vapor-phase epitaxy. The GaInN/GaInN MQW structure reduces the magnitude of polarization sheet charges at heterointerfaces in the active region. The GaInN/GaInN MQW LEDs are shown to have enhanced light-output power, reduced efficiency droop, a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift, compared with conventional GaInN/GaN MQW LEDs.


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