Enhancement of spin-asymmetry by L21-ordering in Co2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices

Sakuraba, Y.; Iwase, T.; Saito, K.; Mitani, S.; Takanashi, K.
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p012511
Academic Journal
Co2MnSi/Cr/Co2MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L21-ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 mΩ μm2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L21-ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.


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