Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Lee, M. L.; Chi, Ping-Feng; Sheu, J. K.
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p013512
Academic Journal
In this study, indium tin oxide (ITO) or ITO/ZnO films, which were prepared by magnetron sputtering, were deposited onto p-GaN epitaxial films to form ultraviolet photodetectors (PDs). The ITO/ZnO/p-GaN heterojunction PDs behave like the p-i-n photodiodes, which characteristically exhibit low dark current, as opposed to the ITO/p-GaN PDs, which exhibit a marked bias-dependent dark current. The zero-bias rejection ratio can be improved up to 4×105 due to a further reduction in the dark current compared to the ITO/p-GaN PDs. When the incident wavelength is 360 nm, the ITO/ZnO/p-GaN heterojunction PD exhibits a zero-bias photocurrent/dark current ratio and a responsivity of approximately 8×104 and 0.015 A/W, respectively.


Related Articles

  • Ultrafast hot electron relaxation time anomaly in InN epitaxial films. Tsai, Tsong-Ru; Chang, Chih-Fu; Gwo, S. // Applied Physics Letters;6/18/2007, Vol. 90 Issue 25, p252111 

    Ultrafast carrier dynamics in InN epitaxial films was investigated by using femtosecond time-resolved pump-probe reflectivity measurements with a photon energy of 1.58 eV. The hot electron relaxation time decreased with increasing electron density (n), measuring at n-0.5. The result was...

  • ZnO/poly(9,9-dihexylfluorene) based inorganic/organic hybrid ultraviolet photodetector. Hai-Guo Li; Gang Wu; Min-Min Shi; Li-Gong Yang; Hong-Zheng Chen; Mang Wang // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p153309 

    Solution processed inorganic/organic hybrid films of ZnO nanoparticles and poly(9,9-dihexylfluorene) (PFH) are sandwiched between two electrodes to form bulk heterojunction in this letter. The devices obtained show high ultraviolet photo-to-dark current ratio of about three orders of magnitude...

  • Recent Progress in Semiconductor Thin Film Technology. Khlyap, Halyna M.; Andrukhivb, Andre M.; Sydorchuk, Petro G. // Recent Patents on Materials Science;Jan2011, Vol. 4 Issue 1, p50 

    Laser irradiation, pulse laser deposition and various epitaxial technologies are used for manufacturing novel micro(nano)electronic devices. IR-detectors are of special interest, in particular, their stable functionality under environmental effects seem to be important. None of the...

  • Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy. Singh, S. D.; Ajimsha, R. S.; Sahu, Vikas; Kumar, Ravi; Misra, P.; Phase, D. M.; Oak, S. M.; Kukreja, L. M.; Ganguli, Tapas; Deb, S. K. // Applied Physics Letters;11/19/2012, Vol. 101 Issue 21, p212109 

    Studies on band-offset and band-alignment of heterojunction of highly c-axis oriented ZnO thin films grown on n-Ge (1 1 1) by pulsed laser deposition show a type-II band alignment with the valence band offset (ΔEV) of 3.1 ± 0.2 eV. The valence band spectra of this heterojunction show band...

  • Characterization of Thin Films of Cd - doped SnO for Optoelectronic Applications. Abd El-Raheem, Mostafa M.; Rasheedy, Mahmoud S.; Ahmed, Hamed E.; Abd El-Aal, Mohamed S.; Al-Ofi, Huda H.; Mohamed, Essam E. // Advances in Applied Science Research;Feb2012, Vol. 3 Issue 1, p227 

    Cadmium tin oxide Cd2SnO4 thin films were prepared by RF magnetron sputtering technique on glass substrates at room temperature. The as-prepared films were amorphous. The optical parameters as transmittance, optical energy gap, refractive index and the width of the band tails of the localized...

  • p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering. Wang, Peng; Chen, Nuofu; Yin, Zhigang; Dai, Ruixuan; Bai, Yiming // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p202102 

    Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05≤=x≤=0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015–1016 cm-3 and a mobility of 0.6–4.5...

  • Fast and reversible excited state absorption in II-VI-based nanocomposite thin films. Vasa, Parinda; Ayyub, Pushan; Singh, B. P. // Applied Physics Letters;8/8/2005, Vol. 87 Issue 6, p063104 

    Nanocomposite CdS-ZnO thin films deposited directly on quartz substrates by high-pressure magnetron sputtering show a completely reversible photodarkening at a very low threshold intensity (∼1 kWcm-2), and a moderately fast recovery time (<1 ms). This makes them ideal in optical limiting...

  • Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates. Agarwal, Mohit; Modi, Pankaj; Dusane, R. O. // Journal of Nano- & Electronic Physics;2013, Vol. 5 Issue 2, p02027-1 

    Aluminum-doped zinc oxide (AZO), as one of the most promising transparent conducting oxide (TCO) material, has now been widely used in thin film solar cells. Most of the study of AZO films till date has been done on glass substrates but nowadays there is a growing interest in replacing glass...

  • Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications. Nolte, David D. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6259 

    Presents information on a study which covered a spectrum of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. Technique on ion implantation of heterostructures; Details on compensated doping during epitaxy; Information on nonstoichiometric...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics