Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

Singh, Samarendra P.; Sonar, Prashant; Sellinger, Alan; Dodabalapur, Ananth
January 2009
Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p013308
Academic Journal
We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.


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