TITLE

Engineering piezoresistivity using biaxially strained silicon

AUTHOR(S)
Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads; Thomsen, Erik V.; Hansen, Ole
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p263501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 6×6 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the piezoresistivity to enhance the performance of piezoresistive stress sensors.
ACCESSION #
36054103

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics