High-quality InGaN/GaN heterojunctions and their photovoltaic effects

Zheng, Xinhe; Horng, Ray-Hua; Wuu, Dong-Sing; Chu, Mu-Tao; Liao, Wen-Yih; Wu, Ming-Hsien; Lin, Ray-Ming; Lu, Yuan-Chieh
December 2008
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p261108
Academic Journal
High-quality p-GaN/i-In0.1Ga0.9N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellösung fringes around the InGaN peak in high-resolution x-ray diffraction (HRXRD) confirm a sharp interface between InGaN and GaN films. The corresponding HRXRD and photoluminescence measurements demonstrate that there is no observable phase separation. The improvement in crystal quality yields high-performance photovoltaic cells with open-circuit voltage of around 2.1 eV and fill factor up to 81% under standard AM 1.5 condition. The dark current-voltage measurements show very large shunt resistance, implying an insignificant leakage current in the devices and therefore achieving the high fill factor in the illuminated case.


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