TITLE

Botulinum toxin detection using AlGaN/GaN high electron mobility transistors

AUTHOR(S)
Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p262101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1 to 10 ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for botulinum toxin detection.
ACCESSION #
36054094

 

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