Influence of the contact metal on the performance of n-type carbonyl-functionalized quaterthiophene organic thin-film transistors

Schols, S.; Van Willigenburg, L.; Müller, R.; Bode, D.; Debucquoy, M.; De Jonge, S.; Genoe, J.; Heremans, P.; Lu, S.; Facchetti, A.
December 2008
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p263303
Academic Journal
Organic thin-film transistors using 5, 5‴-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene (DFHCO-4T) as the electron conducting organic semiconductor are fabricated and the performance of these transistors with different top-contact metals is investigated. Transistors with Au source-drain top contacts attain an apparent saturation mobility of 4.6 cm2/V s, whereas this parameter is 100 times lower for similar transistors with Al/LiF top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor charge injection properties resulting from a redox reaction between Al and DFHCO-4T.


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