Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode

Fang, H.; Sang, L. W.; Zhao, L. B.; Qi, S. L.; Zhang, Y. Z.; Yang, X. L.; Yang, Z. J.; Zhang, G. Y.
December 2008
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p261117
Academic Journal
A kind of phosphor-free GaN based white light-emitting diode was fabricated with a strain adjusting InGaN interlayer. The origin of the strain adjusted white luminescent properties was studied with cathodoluminescence, asymmetrically reciprocal space mapping with high resolution x-ray diffraction, and scanning electron microscopy. The yellow and blue components of the electroluminescence spectrum were attributed to the high indium core and the adjacent indium depleted region in the inverted pyramidal pits on the device surface, respectively. These pits existed at the end of the dislocations induced by the strain relaxation process of the InGaN interlayer.


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