TITLE

Terahertz photoconductivity of Pb1-xSnxTe(In)

AUTHOR(S)
Khokhlov, Dmitry; Ryabova, Ludmila; Nicorici, Andrey; Shklover, Valery; Ganichev, Sergey; Danilov, Sergey; Bel’kov, Vasily
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p264103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have analyzed photoconductivity in Pb1-xSnxTe(In) under the action of ∼100 ns long terahertz laser pulses with the wavelength varying from 90 to 280 μm in the temperature range 4.2–300 K. Strong photoresponse has been observed at all laser wavelengths used. Two types of photoresponse have been detected. Positive persistent photoconductivity, which is observed at T<10 K is due to photoexcitation of impurity states, whereas negative nonpersistent photoresponse prevailing at higher temperatures T∼25 K results from free carrier heating. Specific features of photoconductivity mechanisms are discussed.
ACCESSION #
36054053

 

Related Articles

  • Tunable, continuous-wave Terahertz photomixer sources and applications. Preu, S.; Döhler, G. H.; Malzer, S.; Wang, L. J.; Gossard, A. C. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 6, p061301 

    This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC...

  • Ultrafast terahertz conductivity of photoexcited nanocrystalline silicon. Cooke, David G.; MacDonald, A. Nicole; Hryciw, Aaron; Meldrum, Al; Juan Wang; Li, Q.; Hegmann, Frank A. // Journal of Materials Science: Materials in Electronics;Oct2007 Supplement, Vol. 18, p447 

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a...

  • Emission of terahertz radiations from fractal antennas. Miyamaru, F.; Saito, Y.; Takeda, M. W.; Liu, L.; Hou, B.; Wen, W.; Sheng, Ping // Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p221111 

    We investigate the emission of terahertz radiation from a photoconductive fractal antenna fabricated on a semi-insulating gallium arsenide substrate. Owing to the self-similarity of fractal structures, our fractal antenna shows a multiband emission of terahertz radiation. The emission intensity...

  • Enhanced terahertz emission from a multilayered low temperature grown GaAs structure. Rihani, Samir; Faulks, Richard; Beere, Harvey E.; Farrer, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p091101 

    We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10×10 μm2 mesa defined photoconductive gaps were fabricated on...

  • Formation of DX-centers in indium doped CdTe. T�rker, M.; Kronenberg, J.; Deicher, M.; Wolf, H.; Wichert, Th. // Hyperfine Interactions;2007, Vol. 177 Issue 1-3, p103 

    In CdTe, the achievable n-type doping is limited by the formation of DX-centers. A characteristic feature of DX-centers is the �persistent photoconductivity (PPC)� which is created by illumination at low temperatures and caused by a metastable state of the DX-center. The DX-center and...

  • Photoelectric processes in a five-diode vertically integrated spectrally selective photocell. Khainovskii, V.; Ignat�eva, E.; Uzdovskii, V. // Semiconductors;Dec2009, Vol. 43 Issue 13, p1682 

    Distributions of electrical potentials in the thickness of a five-diode vertically integrated photo-receiving structure are studied. The spectral characteristics of photosensitivity in five regions with differenttype conductivity are obtained. Relaxation times are determined for the above regions.

  • Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films. Sharma, Sanjeev Kumar; Gupta, Himanshu; Kumar, Rajendra; Mehra, Ram Mohan // Turkish Journal of Physics;2005, Vol. 29 Issue 4, p243 

    This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the...

  • Photoconductivity of thin a-Si:H films. Kazanskiĭ, A.; Koshelev, O.; Sazonov, A.; Khomich, A. // Semiconductors;Feb2008, Vol. 42 Issue 2, p192 

    Photoelectric and optical properties of a-Si:H films with a thickness of 60–100 nm were studied. Temperature dependences of photoconductivity in the temperature range 130–440 K and spectral dependences of the absorption coefficient near the absorption edge were measured. The...

  • The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification. Fang, F.; Zhao, D. X.; Li, B. H.; Zhang, Z. Z.; Zhang, J. Y.; Shen, D. Z. // Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233115 

    10 nm sized hexagonal CdS nanoparticles were decorated on the surface of well-aligned ZnO nanowall through a facile hydrothermal approach. The effects of CdS-cap layer on the optical and photoelectrical properties of ZnO nanowalls have been studied. It was found the CdS acted not only as a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics