Effects of donor doping on Ga1-xMnxAs

Cho, Y. J.; Yu, K. M.; Liu, X.; Walukiewicz, W.; Furdyna, J. K.
December 2008
Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p262505
Academic Journal
We investigate the effect compensating Mn acceptors in Ga1-xMnxAs films by doping with Si donors. For Ga1-xMnxAs with low Mn content (e.g., x<0.033), doping by Si decreases the Curie temperature TC compared to undoped Ga1-xMnxAs. At high values of x, however (e.g., x>0.10), Si doping is found to increase TC. We ascribe this to an increase in the hole mobility in high x samples due to changes in the relative occupancy of the hole impurity band associated with compensation by the Si donors.


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