Strain relaxation dependent island nucleation rates during the Stranski–Krastanow growth of GaN on AlN by molecular beam epitaxy

Koblmüller, G.; Averbeck, R.; Riechert, H.; Hyun, Y.-J.; Pongratz, P.
December 2008
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243105
Academic Journal
This study reports on the correlation between strain relaxation and nucleation kinetics during the Stranski–Krastanow growth of GaN on (0001)AlN by plasma-assisted molecular beam epitaxy. Using reflection high-energy electron diffraction and real-time desorption mass spectrometry, the strain-related Ga adatom detachment and desorption rates were determined, giving information about the average GaN island nucleation rate. Two different regimes were found: one at low-temperature growth (690720 °C), islands showed an abrupt relaxation mode, accompanied by a fast nucleation rate toward island sizes twice as large.


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