Interface roughness in short-period InGaAs/InP superlattices

Pusep, Yu. A.; Gozzo, G. C.; LaPierre, R. R.
December 2008
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p242104
Academic Journal
Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.


Related Articles

  • High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy. Koblmüller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernández-Garrido, S.; Calleja, E. // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p221905 

    An alternative approach is presented for the plasma-assisted molecular beam epitaxy of high-quality GaN. Under N-rich growth conditions, an unexpected layer-by-layer growth mode was found for a wide range of growth temperatures in the GaN thermal decomposition regime (>750 °C). Consequently,...

  • Structural and electrophysical analysis of MHEMT InAlAs/InGaAs nanoheterostructures with different strain distributions in metamorphic buffer. Galiev, G.; Pushkarev, S.; Vasil'evskii, I.; Klimov, E.; Imamov, R.; Subbotin, I.; Pavlenko, E.; Kvanin, A. // Crystallography Reports;Nov2012, Vol. 57 Issue 6, p841 

    A complex structural and electrophysical analysis of MHEMT InAlAs/InGaAs nanoheterostructures grown on (100)GaAs substrates using two radically new designs of metamorphic buffer (providing different internal-strain distributions) has been performed. The lattice parameters of the...

  • Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting. Niida, Yoshitaka; Takashina, Kei; Ono, Yukinori; Fujiwara, Akira; Hirayama, Yoshiro // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p191603 

    We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device....

  • Be ion irradiation induced p- to n-type conversion in HgCdTe. Manchanda, Rachna; Sharma, R. K.; Malik, A.; Pal, R.; Dhaul, Anuradha; Dutt, M. B.; Basu, P. K.; Thakur, O. P. // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p116102 

    Be ion implantation/irradiation in HgCdTe has been explored from the point of view of fabricating n region on p-type structures. Be implantation was carried out in vacancy doped p-type bulk HgCdTe crystals at 200 KeV ion energy and a fluence of 1×1014 ions/cm2. Implanted samples were...

  • Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors. Shim, Tae-Hun; Kim, Seong-Je; Lee, Gon-Sub; Kim, Kwan-Su; Cho, Won-Ju; Park, Jea-Gun // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p094522 

    We investigated the dependence of temperature and self-heating on electron mobility in ultrathin body fully depleted silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors as a function of silicon thickness by analyzing their electron states and electrical characteristics. We...

  • Electrical characteristics of single-component ambipolar organic field-effect transistors and effects of air exposure on them. Sakanoue, Tomo; Yahiro, Masayuki; Adachi, Chihaya; Takimiya, Kazuo; Toshimitsu, Akio // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p094509 

    We investigated the electrical characteristics of single-component ambipolar organic field-effect transistors (OFETs) by controlling the device structure and preparation and the measurement conditions. Six organic semiconductor materials (copper-phthalocyanine, tris-(8-hydroxyquinoline)aluminum...

  • High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure. Zhang, S.; Li, M. C.; Feng, Z. H.; Liu, B.; Yin, J. Y.; Zhao, L. C. // Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p212101 

    High electron mobility and low sheet resistance were achieved in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel (DC) heterostructure. Two-dimensional electron gas (2DEG) of the DC heterostructure was divided into the double channels and the room-temperature mobility was increased to 1430...

  • Modulation doping in ZnO nanorods for electrical nanodevice applications. Jinkyoung Yoo; Chul-Ho Lee; Yong-Joo Doh; Hye Seong Jung; Gyu-Chul Yi // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223117 

    We introduce a modulation-doping method to control electrical characteristics of ZnO nanorods. Compared with a conventional homogeneous doping method, the modulation-doping method generates localized doping layers along the circumference in ZnO nanorods, useful for many device applications....

  • Space charge limited current in a gap combined of free space and solid. Chandra, W.; Ang, L. K. // Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183501 

    The paper presents a model of the space charge limited (SCL) electron conduction in a gap with a combination of free space and dielectric solid. The SCL electron current density J is solved numerically to obtain the voltage scaling of J∼VGn, and n is found to be between n=3/2 (a vacuum gap)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics