TITLE

Interface roughness in short-period InGaAs/InP superlattices

AUTHOR(S)
Pusep, Yu. A.; Gozzo, G. C.; LaPierre, R. R.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p242104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.
ACCESSION #
35922149

 

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