Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

Xiaodong Yang; Parthasarathy, Srivatsan; Yongke Sun; Koehler, Andrew; Nishida, Toshikazu; Thompson, Scott E.
December 2008
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243503
Academic Journal
Uniaxial stress enhanced hole mobility is measured for (100)/<110> silicon (Si) p-channel metal-oxide-semiconductor field-effect transistor from 300 to 87 K. For the technologically important longitudinal compressive stress along <110>, the percent change in the uniaxial stress enhanced hole mobility is observed to increase at lower temperatures, which is opposite to the trend for biaxially stressed devices. The stress enhanced mobility is compared with six band k·p with finite difference formalism, which shows that the larger mobility gain at lower temperatures results from greater uniaxial stress induced hole conductivity mass reduction. The larger mass reduction results from more holes occupying states at the band edge, which have a light hole conductivity mass in the channel direction. For the uniaxial stress range in this work (<500 MPa), negligible strain altered phonon and surface roughness scattering rates are observed.


Related Articles

  • The Impact Of Soft-Optical Phonon Scattering Due To High-κ Dielectrics On The Performance Of Sub-100nm Conventional And Strained Si n-MOSFETs. Yang, L.; Watling, J. R.; Barker, J. R.; Asenov, A. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1497 

    Self-consistent Poisson/Ensemble Monte Carlo simulations are used to investigate performance degradations due to soft-optical phonon scattering introduced by high-κ dielectrics within sub-100nm conventional Si and strained Si MOSFETs. A degradation in the drive current of ∼25% at...

  • Scattering at MOS Interfaces. Shah, Raheel; De Souza, M. M. // World Congress on Engineering 2009 (Volume 1);2009, p392 

    The comprehensive Ando' surface roughness (SR) model is implemented for nMOSFETs. Four distinct source terms contribute in SR scattering. Relative strength of these contributing source terms are evaluated and compared. The most influential term turned out to be due to scattering with the...

  • Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors. Ming-Tsong Wang; Bonds Yi-Yi Cheng; Joseph Ya-min Lee // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p242905 

    The mobility degradation mechanism of n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with ZrO2 gate dielectric was studied. The temperature dependence of device characteristics was studied in the temperature range from 300 to 420 K. The electron mobility limited by...

  • Semi-Empirical Phonon Scattering Model. Shah, Raheel; De Souza, M. M. // World Congress on Engineering 2009 (Volume 1);2009, p417 

    Bulk phonon limited mobility in silicon based MOSFETs, have long been observed to demonstrate a -1/3rd dependence on the effective transverse field at room and higher temperatures. However, despite significant effort, existing phonon scattering models fail to reproduce this dependence. This...

  • Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor. Ran Cheng; Bin Liu; Yee-Chia Yeo // Applied Physics Letters;3/1/2010, Vol. 96 Issue 9, p092113 

    We report the investigation of carrier backscattering characteristics of compressively strained p-channel field-effect transistors (p-FETs) with diamondlike carbon (DLC) liner stressor. p-FETs strained by the DLC liner exhibit up to ∼40% enhancement in carrier injection velocity υinj....

  • Nonlinear I-V characteristics of nanotransistors in the Landauer-Büttiker formalism. Nemnes, G. A.; Wulf, U.; Racec, P. N. // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p084308 

    We present the nonlinear I-V characteristics of a nanoscale metal-oxide-semiconductor field-effect transistor in the Landauer-Büttiker formalism. In our three-dimensional ballistic model the gate, source, and drain contacts are treated on an equal footing. As in the drift-diffusion regime for...

  • Transport and quantum scattering time in field-effect transistors. Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Majkusiak, B. // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p172104 

    A modulated magnetoresistance method was applied to measure the transport (Ï„t) and quantum (Ï„q) scattering times for electrons in Si metal-oxide-semiconductor field-effect transistors. Both Ï„t and Ï„q were determined by self-consistent fitting the derivative of the low-field...

  • Carrier mobility degradation in metal-oxide-semiconductor field-effect transistors due to oxide charge. Phanse, A.; Sharma, D.; Mallik, A.; Vasi, J. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p757 

    Studies the carrier mobility degradation in metal-oxide-semiconductor field-effect transistors (MOSFET) due to oxide charge. Expression for the carrier mobility in MOSFET due to oxide charge scattering; Impact of radiation on MOSFET; Calculation of the scattering cross section of an oxide charge.

  • Scattering of silicon inversion layer electrons by metal/oxide interface roughness. Li, Jia; Ma, T.-P. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4212 

    Presents a study which modeled the roughness at the metal/gate oxide interface of metal-oxide-semiconductor field-effect transistor (MOSFET). Mobility of electrons inside the channel of the MOSFET; Magnitude of the scattering mechanism in the study; Results of the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics