TITLE

Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric

AUTHOR(S)
Tsukazaki, A.; Ohtomo, A.; Chiba, D.; Ohno, Y.; Ohno, H.; Kawasaki, M.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p241905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A top-gate field-effect device with atomic-layer-deposited Al2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO–Mg0.12Zn0.88O double heterostructure grown by laser molecular-beam epitaxy. Hall mobility monotonically increased as the density of accumulated electrons increased. The highest mobility at 2 K was recorded to be 5000 cm2 V-1 s-1 at a 2DEG density of 1.2×1012 cm-2, which is comparable to the previously reported value for a metallic ZnO/Mg0.2Zn0.8O heterostructure. Insulator-to-metal transition was observed at a critical density of 6×1011 cm-2. The metallic-state channel exhibited Shubnikov–de Haas oscillations, demonstrating an electric-field tunable quantum device based on transparent oxide semiconductor.
ACCESSION #
35922131

 

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