Fabrication of poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate

Nakamura, T.; Kuraseko, H.; Hanazawa, K.; Koaizawa, H.; Uraoka, Y.; Fuyuki, T.; Mimura, A.
December 2008
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p241503
Academic Journal
The continuous deposition of polycrystalline silicon film on quartz fiber by local thermal chemical deposition was investigated. High-speed deposition owing to high temperature and locality was examined using fixed and moving substrates. We confirmed the high-speed deposition of polycrystalline silicon and achieved a maximum speed of over 1 μm/s. Furthermore, we succeeded in a continuous deposition of polycrystalline thin silicon with a thickness of 50–100 nm on a quartz fiber with low roughness and low impurity content. Thin film transistor with a mobility more than 3.7 cm2/V s was achieved by using this film.


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