TITLE

Self-doping effects in epitaxially grown graphene

AUTHOR(S)
Siegel, D. A.; Zhou, S. Y.; El Gabaly, F.; Fedorov, A. V.; Schmid, A. K.; Lanzara, A.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.
ACCESSION #
35922114

 

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