Self-doping effects in epitaxially grown graphene

Siegel, D. A.; Zhou, S. Y.; El Gabaly, F.; Fedorov, A. V.; Schmid, A. K.; Lanzara, A.
December 2008
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243119
Academic Journal
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.


Related Articles

  • Healing of graphene on single crystalline Ni(111) films. Zeller, Patrick; Speck, Florian; Weinl, Michael; Ostler, Markus; Schreck, Matthias; Seyller, Thomas; Wintterlin, Joost // Applied Physics Letters;11/10/2014, Vol. 105 Issue 19, p1 

    The annealing of graphene layers grown on 150 nm thick single crystal Ni(111) films was investigated in situ by low energy electron microscopy and photoemission electron microscopy. After growth, by means of chemical vapor deposition of ethylene, the graphene layers consist of several domains...

  • Effective surface Debye temperature for NiMnSb(100) epitaxial films. Borca, C. N.; Komesu, Takashi; Jeong, Hae-kyung; Dowben, P. A.; Ristoiu, D.; Hordequin, Ch.; Pierre, J.; Nozieres, J. P. // Applied Physics Letters;7/3/2000, Vol. 77 Issue 1 

    The surface Debye temperature of the NiMnSb (100) epitaxial films has been obtained using low energy electron diffraction, inverse photoemission, and core-level photoemission. The normal dynamic motion of the (100) surface results in a value for the effective surface Debye temperature of...

  • Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth. Shigeta, Yukichi; Maki, Kunisuke // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2078 

    Low-energy electron diffraction intensity from crystallized Si film after solid phase epitaxial growth of its amorphous phase was measured. The intensity profile always shows a formation of 7×7 reconstructed structure, and the intensity I depends on the thickness of the amorphous Si film, d:...

  • A video data-acquisition system for quantitative low-energy electron diffraction studies. Guo, T.; Atkinson, R. E.; Ford, W. K. // Review of Scientific Instruments;Mar90, Vol. 61 Issue 3, p968 

    We have developed an easy to use and inexpensive low-energy electron diffractometer. The system is based on an Apple Macintosh II microcomputer and uses a high-resolution CCD video camera. The video interface is a single plug-in imaging board which digitizes the video signal in real time. No...

  • Ordered, quasiepitaxial growth of an organic thin films on Se-passivated GaAs(100). Hirose, Y.; Forrest, S.R. // Applied Physics Letters;2/20/1995, Vol. 66 Issue 8, p944 

    Examines the quasiepitaxial growth of perylenetetracarboxylic dianhydride (PTCDA) thin films on selenium (Se) passivated GaAs(100) deposited at room temperature in ultrahigh vacuum. Observation of growth on the Se passivated substrate; Production of diffuse ringlike low energy electron...

  • Adsorbate-induced one-dimensional long-range modulation of an epitaxial insulator film. Ernst, W.; Eichmann, M.; Pfnu¨r, H.; Jonas, K.-L.; von Oeynhausen, V.; Meiwes-Broer, K. H. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2595 

    Using low-energy electron diffraction and scanning tunneling micrsocopy, we found that epitaxial NaCl films grown on Ge(100) with thicknesses up to (at least) 15 monolayers can be modulated with a period of six lattice constants and an amplitude directed mainly normal to their surface. The...

  • Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation. Al-Temimy, A.; Riedl, C.; Starke, U. // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p231907 

    Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si depletion as in the conventional sublimation method, monolayer graphene evolves at significantly lower temperatures by...

  • How Cooper pairs vanish approaching the Mott insulator in Bi2Sr2CaCu2O8+δ. Kohsaka, Y.; Taylor, C.; Wahl, P.; Schmidt, A.; Jhinhwan Lee; Fujita, K.; Alldredge, J. W.; McElroy, K.; Lee, Jinho; Eisaki, H.; Uchida, S.; Lee, D.-H.; Davis, J. C. // Nature;8/28/2008, Vol. 454 Issue 7208, p1072 

    The antiferromagnetic ground state of copper oxide Mott insulators is achieved by localizing an electron at each copper atom in real space (r-space). Removing a small fraction of these electrons (hole doping) transforms this system into a superconducting fluid of delocalized Cooper pairs in...

  • Epitaxial growth of μm-sized Cu pyramids on silicon. Seyffarth, Susanne; Krebs, Hans-Ulrich // Applied Physics A: Materials Science & Processing;Jun2010, Vol. 99 Issue 4, p735 

    Triangular and quadratic Cu pyramids were epitaxially grown on Si(111) and Si(100) substrates, respectively, by pulsed laser deposition at elevated substrate temperatures above 200°C as well as by post-annealing of closed Cu layers prepared at room temperature. In both cases,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics