TITLE

Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys

AUTHOR(S)
Lin, Y. C.; Chou, W. C.; Fan, W. C.; Ku, J. T.; Ke, F. K.; Wang, W. J.; Yang, S. L.; Chen, W. K.; Chang, W. H.; Chia, C. H.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p241909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Kohlrausch’s stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
ACCESSION #
35922113

 

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