TITLE

Energy gap modulation in V2O5 nanowires by gas adsorption

AUTHOR(S)
Byung Hoon Kim; Ansoon Kim; Soon-Young Oh; Sung-Soo Bae; Yong Ju Yun; Han Young Yu
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The current-voltage characteristics at various pressures (2–10 atm) and the scanning tunneling microscopy of vanadium pentoxide nanowires (VONs) with the inert gases (He, Ne, and Ar) and diatomic molecules (H2, N2, O2) have been investigated. The gas dependent conductance (G) is consistent with the inverse energy gap obtained from the scanning tunneling spectroscopy study for the gas-adsorbed single VON. The three possible interactions for gas adsorption of the VON have been discussed. Among them, we have found that the induced dipole-dipole interaction between adsorbed gases plays an important role in conductance variation in the gas adsorbed VON using the conductance per molecule (G/N).
ACCESSION #
35886576

 

Related Articles

  • Evidence for surface states in a single 3 nm diameter Co3O4 nanowire. Yi Sun; Ji-Yong Yang; Rui Xu; Lin He; Rui-Fen Dou; Jia-Cai Nie // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262106 

    The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is...

  • Energy-gap spectroscopy of superconductors using a tunneling microscope. Le Duc, H. G.; Kaiser, W. J.; Stern, J. A. // Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1921 

    A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 102–103 greater than that...

  • Electron tunneling characteristics of a cubic quantum dot, (PbS)32. Gupta, Sanjeev K.; He, Haiying; Banyai, Douglas; Kandalam, Anil K.; Pandey, Ravindra // Journal of Chemical Physics;Dec2013, Vol. 139 Issue 24, p244307 

    The electron transport properties of the cubic quantum dot, (PbS)32, are investigated. The stability of the quantum dot has been established by recent scanning tunneling microscope experiments [B. Kiran, A. K. Kandalam, R. Rallabandi, P. Koirala, X. Li, X. Tang, Y. Wang, H. Fairbrother, G....

  • A marine makeover. Stoddart, Alison // Nature Materials;Aug2012, Vol. 11 Issue 8, p661 

    Than article presents information on the development of vanadium pentoxide nanowires having antibacterial properties which prevents biofouling on boat hull in seawater for 60 days.

  • Small mesas and holes in split-gate quantum wires acting as ‘‘artificial impurities’’ fabricated with scanning tunneling microscope. Yamada, Syoji; Yamamoto, Masafumi // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8391 

    Presents information on a study that discussed the fabrication of artificial impurities such as small mesas and holes with a scanning tunneling microscope (STM) in split-gate quantum wires and their transport properties. STM fabrication of small structures; Experimental results on transport...

  • Scanning tunneling microscopic study of boron-doped silicon nanowires. Ma, D. D. D.; Lee, C. S.; Lee, S. T. // Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2468 

    Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular...

  • Formation of highly crystalline C60 molecular films on a Bi(0001)/Si(111) surface. Oreshkin, A. I.; Bakhtizin, R. Z.; Sadowski, J. T.; Fujikawa, Y.; Sakurai, T. // JETP Letters;Dec2007, Vol. 86 Issue 8, p522 

    The results of scanning tunneling microscopy (STM) investigation of controllable growth of C60 adsorption on a Bi(0001)/Si(111) surface are reported. With the use of UHV STM, it has been shown that the most favorable sites for the initial stage of C60 adsorption are the double steps and domain...

  • Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy. Ono, Takahito; Saitoh, Hiroaki // Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1852 

    Details the growth of silicon (Si) nanowires by applying a voltage of a constant current between Si substrate and a gold scanning tunneling microscope tip. Deposition of silicon atoms into a gold tip by field evaporation; Activation of the field evaporation rate of silicon atoms; Importance of...

  • Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope. Pfister, M.; Johnson, M.B. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1459 

    Examines the incorporation of indium (In) in the growth of InGaAs quantum wires in superlattice barriers by scanning tunneling microscopy. Atomic resolution of the In distribution in the surface and subsurface layer; Observation of strong In segregation at the InGaAs/GaAs interfaces; Absence...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics