Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Mun, Sung-jin; Choi, Jeong-M.; Lee, Kwang H.; Lee, Kimoon; Im, Seongil
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233301
Academic Journal
We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm-thin pentacene grown on the SiO2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on SiO2.


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