TITLE

Electrically driven single InGaN/GaN quantum dot emission

AUTHOR(S)
Jarjour, Anas F.; Taylor, Robert A.; Oliver, Rachel A.; Kappers, Menno J.; Humphreys, Colin J.; Tahraoui, Abbes
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electroluminescence from single nitride-based quantum dots is reported. Clear single quantum dot emission is observed, which persists up to ∼85 K. This is achieved through the study of a quantum dot layer in the intrinsic region of a forward-biased vertical p-i-n diode. The current-voltage characteristic of the devices is examined at 4.3 K and observed to exhibit electrical bistability phenomena, which is explained in terms of charge accumulation in the InGaN layer. The dependence of the emission properties on current injection conditions are presented and related to the electrical properties of the device.
ACCESSION #
35886562

 

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