Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

Cai, Y.; Wong, T. L.; Chan, S. K.; Sou, I. K.; Su, D. S.; Wang, N.
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233107
Academic Journal
Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.


Related Articles

  • Growth of ZnSe(1-x)Tex epilayers by isothermal closed space sublimation. Larramendi, Erick M.; Gutiérrez Z-B, Karla; Arens, Christof; Woggon, Ulrike; Schikora, Detlef; Lischka, Klaus // Journal of Applied Physics;Jun2010, Vol. 107 Issue 10, p103510 

    ZnSe(1-x)Tex (x∼0.06) epilayers were grown on GaAs(001) substrates at 350 °C by isothermal closed space sublimation (ICSS) technique. The epitaxial growth was performed in low-pressure helium atmosphere (∼0.1 mbar) by sequential exposures of the substrate to vapors of a solid...

  • Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique. Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p061907 

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Synthesis of the ferroelectric solid solution, Pb(Zr1-xTix)O3 on a single substrate using a modified molecular beam epitaxy technique. Anderson, P. S.; Guerin, S.; Hayden, B. E.; Khan, M. A.; Bell, A. J.; Han, Y.; Pasha, M.; Whittle, K. R.; Reaney, I. M. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p202907 

    High-throughput synthesis of the ferroelectric solid solution Pb(Zr1-xTix)O3 (PZT) on single Pt/Ti/SiO2/Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral to tetragonal symmetry as a function of Zr:Ti...

  • Role of lateral interaction in the homoepitaxy of GaAs on the (001)-β(2 × 4) surface. Galitsyn, Yu. G.; Dmitriev, D. V.; Mansurov, V. G.; Moshchenko, S. P.; Toropov, A. I. // JETP Letters;Dec2007, Vol. 86 Issue 7, p482 

    The homoepitaxy of GaAs on the (001)-β(2 × 4) surface during molecular beam epitaxy is considered as a twodimensional first-order phase transition from the lattice gas of adsorbed growth components to the two-dimensional crystalline phase. In the context of the mean field theory of phase...

  • Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy. Prinz, G. A.; Jonker, B. T.; Krebs, J. J.; Ferrari, J. M.; Kovanic, F. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1756 

    Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance...

  • Critical thickness in epitaxial CdTe/ZnTe. Cibert, J.; Gobil, Y.; Dang, Le Si; Tatarenko, S.; Feuillet, G.; Jouneau, P. H.; Saminadayar, K. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p292 

    The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics