TITLE

A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

AUTHOR(S)
Ming-Feng Chang; Po-Tsung Lee; McAlister, S. P.; Chin, Albert
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-κ dielectric as charge trapping, blocking, and tunneling gate insulator layers.
ACCESSION #
35886537

 

Related Articles

  • Electrical conduction mechanisms in the transfer characteristics of pentacene thin film transistors. Yow-Jon Lin; Yu-Cheng Lin // Applied Physics Letters;7/14/2014, Vol. 105 Issue 2, p1 

    In order to understand the electrical conduction mechanisms in the transfer characteristics of pentacene-based organic thin film transistors (OTFTs), an analysis using the temperaturedependent transfer characteristics is presented. The temperature-dependent transfer characteristics exhibit...

  • Pentacene organic thin-film transistors and ICs. Klauk, Hagen; Jackson, Thomas N.; Gundlach, David J.; Nichols, Jonathan A.; Sheraw, Chris D.; Bonse, Mathias // Solid State Technology;Mar2000, Vol. 43 Issue 3, p63 

    Discusses the use of pentacene organic thin-film transistors (TFT) in integrated circuits. Applications of organic TFT in electronics; Information on the fabrication of pentacene TFT; Electrical properties of pentacene TFT fabricated on glass; Significance of TFT on hydrogenated amorphous silicon.

  • The Effect of Optical Radiation on the Semiconductor Conductivity in a Thin-Film Ferroelectric–Semiconductor Structure. Afanas'ev, V. P.; Bulat, D. Yu.; Kaptelov, E. Yu.; Pronin, I. P. // Technical Physics Letters;Jun2004, Vol. 30 Issue 6, p518 

    We have studied the effect of optical radiation on the conductivity of a thin-film field-effect transistor based on a multilayer structure of the Si–SiO2–Pt–PZT–SnO2 – x–Pt type. Within the permissible radiation dose, the conducting channel exhibits a...

  • Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering. Zhao, Wei; Qi, Yabing; Sajoto, Tissa; Barlow, Stephen; Marder, Seth R.; Kahn, Antoine // Applied Physics Letters;9/20/2010, Vol. 97 Issue 12, p123305 

    We demonstrate that holes from a p-doped N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of...

  • Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator. Lee, Cheon An; Park, Dong-Wook; Jung, Keum-Dong; Kim, Byung-ju; Kim, Yoo Chul; Lee, Jong Duk; Park, Byung-Gook // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p262120 

    The hysteresis mechanism is studied in pentacene organic thin-film transistors (OTFTs) with poly(4-vinyl phenol) (PVP) gate insulator by examining OTFTs with an oxide/PVP double layer gate insulator. The oxide thickness affects the direction of the hysteresis as well as its magnitude. This...

  • Tuning charge transport in pentacene thin-film transistors using the strain-induced electron-phonon coupling modification. Lin, Yow-Jon; Chang, Hsing-Cheng; Liu, Day-Shan // Applied Physics A: Materials Science & Processing;Mar2015, Vol. 118 Issue 4, p1205 

    Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoO capping layer that serves to the electron-phonon coupling modification is reported. For OTFTs with a MoO front gate, the enhanced field-effect carrier mobility is investigated. The...

  • Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors. Malti, Abdellah; Berggren, Magnus; Crispin, Xavier // Applied Physics Letters;4/30/2012, Vol. 100 Issue 18, p183302 

    Organic transistors that use polyelectrolytes as gate insulators can be driven at very low voltages (<1 V). The low operating voltage is possible thanks to the formation of electric double layers upon polarization, which generates large electric fields at the critical interfaces in the device...

  • 1/f noise in pentacene organic thin film transistors. Necliudov, P. V.; Rumyantsev, S. L.; Shur, M. S.; Gundlach, D. J.; Jackson, T. N. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5395 

    Reports on the flicker noise in pentacene organic thin film transistors (TFT) of different designs. Effect of the TFT design on the noise level and dependence on the gate and drain-source biases; Extracted Hooge parameter alpha; Higher noise level of the bottom source and drain contacts TFT.

  • Thin film transistors fabricated by evaporating pentacene under electric field. Mandal, Tapendu; Garg, Ashish; Deepak // Journal of Applied Physics;Oct2013, Vol. 114 Issue 15, p154517 

    Organizing the pentacene molecules with respect to the substrate is an essential prerequisite for achieving high field effect mobility in organic thin film transistors. Here, we report electrical characteristics of bottom gate, top contact Sin++/SiO2/pentacene/gold thin film transistors using...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics