A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

Ming-Feng Chang; Po-Tsung Lee; McAlister, S. P.; Chin, Albert
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233302
Academic Journal
We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-κ dielectric as charge trapping, blocking, and tunneling gate insulator layers.


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