TITLE

Reduced boron lateral ion channeling in very short p-channel transistors by switching from <110> to <100> channel orientation

AUTHOR(S)
Lau, W. S.; Yang, Peizhen; Ho, V.; Lim, B. K.; Siah, S. Y.; Chan, L.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The on-current of p-channel transistors fabricated on (100) Si substrate can be easily increased by switching from <110> to <100> channel orientation because of faster hole transport. In this paper, we pointed out that there is also a reduction in the gate-to-source/drain overlap, resulting in an increase in the effective channel length for p-channel transistors. Our experimental observation can be explained by a reduction in boron lateral ion channeling due to this switch.
ACCESSION #
35886535

 

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