Reduced boron lateral ion channeling in very short p-channel transistors by switching from <110> to <100> channel orientation

Lau, W. S.; Yang, Peizhen; Ho, V.; Lim, B. K.; Siah, S. Y.; Chan, L.
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233505
Academic Journal
The on-current of p-channel transistors fabricated on (100) Si substrate can be easily increased by switching from <110> to <100> channel orientation because of faster hole transport. In this paper, we pointed out that there is also a reduction in the gate-to-source/drain overlap, resulting in an increase in the effective channel length for p-channel transistors. Our experimental observation can be explained by a reduction in boron lateral ion channeling due to this switch.


Related Articles

  • AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor. Kang, B.S.; Ren, F.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J. // Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1123 

    The characteristics of Sc[sub 2]O[sub 3]/AlGaN/GaN metal–oxide–semiconductor (MOS) diodes as hydrogen gas sensors are reported. At 25 °C, a change in forward current of ∼6 mA at a bias of 2 V was obtained in response to a change in ambient from pure N[sub 2] to 10% H[sub...

  • Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes. Kim, Jihyun; Mehandru, R.; Luo, B.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Irokawa, Y. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4555 

    Gate-controlled n[sup +] p metal-oxide-semiconductor diodes were fabricated in p-GaN using MgO as a gate dielectric and Si[sup +] implantation to create the n[sup +] regions. This structure overcomes the low minority carrier generation rate in GaN and allowed observation of clear inversion...

  • Atomic-layer-deposited silicon-nitride/SiO[sub 2] stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors. Nakajima, Anri; Yoshimoto, Takashi; Kidera, Toshiro; Obata, Katsunori; Yokoyama, Shin; Sunami, Hideo; Hirose, Masataka // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    An extremely thin (∼0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO[sub 2] by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved,...

  • Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment. Asano, Akira; Asuha; Maida, Osamu; Todokoro, Yoshihiro; Kobayashi, Hikaru // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4552 

    Crown-ether cyanide treatment, which includes the immersion of Si in KCN solutions containing 18-crown-6 molecules, is found to greatly decrease the leakage current density of Si-based metaloxide-semiconductor (MOS) diodes. The decrease by one order of magnitude for the single crystalline...

  • Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride. Aoyama, Takayuki; Suzuki, Kunihiro; Tashiro, Hiroko; Toda, Yoko; Yamazaki, Tatsuya; Takasaki, Kanetake; Ito, Takashi // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p417 

    Presents a study that investigated the effects of fluorine on boron diffusion in thin silicon oxides used for metal-oxide-semiconductor structures including silicon dioxide and oxynitride. Diffusion coefficients in silicon dioxide; Boron diffusion coefficients in silicon dioxide; Diffusion...

  • The J/K Method: A Technique to Select the Optimal MOSFET. MILLER, PETER JAMES // Power Electronics Technology;Jun2010, Vol. 36 Issue 6, p39 

    The article discusses J-K method of selecting the optimal performance metal oxide semiconductor field-effect transistors (MOSFET). As stated, there are different loss factors caused by switching MOSFETS including conduction loss, body diode conduction loss, gate drive loss and output capacitance...

  • Experiment #26: Solid-State RF Switches.  // QST;Mar2005, Vol. 89 Issue 3, p49 

    Reports on the experiment with PIN diodes and integrated circuit CMOS switches Capability of PIN diode to act as either a switch or attenuator controlled by a direct current bias current; Creation of a thin depletion region where holes and electrons quickly cancel each other out; Examples of...

  • Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density. Vasiliev, P. V.; Lyubutin, S. K.; Ponomarev, A. V.; Rukin, S. N.; Slovikovsky, B. G.; Tsyranov, S. N.; Cholakh, S. O. // Semiconductors;Jul2009, Vol. 43 Issue 7, p953 

    The mechanism of operation of a semiconductor opening switch (a SOS diode) at the forward-pumping time of a microsecond and low current density was studied. The current’s cutoff time shorter than 10 ns at the voltage across the SOS diode as high as 80 kV was obtained experimentally at the...

  • Transient injection and fast switch on in p-i-n diodes. Mnatsakanov, T. T.; Tandoev, A. G.; Yurkov, S. N.; Levinshtein, M. E.; Ivanov, P. A.; Palmour, J. W. // Journal of Applied Physics;4/1/2006, Vol. 99 Issue 7, p074503 

    Fast and ultrafast switch-on processes in p-n diodes at very high current densities j and very short current rise time Ï„0 have been investigated analytically. It is demonstrated that even at relatively modest values of the rate of current density rise dj/dt, the switch-on transient...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics