TITLE

Efficient readout of micromechanical resonator arrays in ambient conditions

AUTHOR(S)
Venstra, W. J.; van der Zant, H. S. J.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p234106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a method for efficient spectral readout of mechanical resonator arrays in dissipative environments. Magnetomotive drive and detection are used to drive double clamped resonators in the nonlinear regime. Resonators with almost identical resonance frequencies can be tracked individually by sweeping the drive power. Measurements are performed at room temperature and atmospheric pressure. These conditions enable application in high throughput resonant sensor arrays.
ACCESSION #
35886514

 

Related Articles

  • Flexible graphene woven fabrics for touch sensing. Lee, Xiao; Yang, Tingting; Li, Xiao; Zhang, Rujing; Zhu, Miao; Zhang, Hongze; Xie, Dan; Wei, Jinquan; Zhong, Minlin; Wang, Kunlin; Wu, Dehai; Li, Zhihong; Zhu, Hongwei // Applied Physics Letters;4/22/2013, Vol. 102 Issue 16, p163117 

    Graphene woven fabric (GWF) prepared from chemical vapor deposition was used as smart self-sensing element to assemble piezoresistor through directly transferring onto the flexible substrate poly(dimethylsiloxane) (PDMS) with the deposited Ti/Au electrodes. A rational strategy was proposed to...

  • Formation of coherent superdots using metal-organic chemical vapor deposition. Ledentsov, N. N.; Bo¨hrer, J.; Bimberg, D.; Kochnev, I. V.; Maximov, M. V.; Kop’ev, P. S.; Alferov, Zh. I.; Kosogov, A. O.; Ruvimov, S. S.; Werner, P.; Go¨sele, U. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1095 

    We demonstrate direct growth of electronically coupled zero-dimensional structures forming a super-quantum dot using metal-organic chemical vapor deposition. After the first sheet with InGaAs pyramids is formed on GaAs surface, alternate short-period GaAs-InGaAs deposition leads to spontaneous...

  • Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth.... Grutzmacher, D.A.; Sedgwick, T.O. // Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2531 

    Examines the germanium segregation of silicon/silicon germanium heterostructures grown in atmospheric pressure chemical vapor deposition (CVD) reactor. Similarity of results grown by ultra high vapor/CVD and molecular beam epitaxy (MBE); Details on MBE grown profiles; Formation of hydrogen...

  • Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method. Manabe, Y.; Mitsuyu, T. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2475 

    Deals with a study which described properties of the SiN films prepared by the electron cyclotron resonance plasma chemical vapor deposition method concerned with the effect of N[sub2] partial pressure and compared the results with those of conventional methods. Experimental procedure; Results...

  • A flexible graphene touch sensor in the general human touch range. Sungwoo Chun; Youngjun Kim; Hyojin Jung; Wanjun Park // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    We present a transparent touch sensor based on single layers of graphene that works under a gentle touch. Using the flexible characteristics of graphene, a touching event and a vertical force are measured by a change in the channel conductance. In contrast to the previous graphene gauge sensors,...

  • Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy. Chen, C. H.; Kitamura, M.; Cohen, R. M.; Stringfellow, G. B. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p963 

    We report the growth and characterization of ultrapure InP using trimethylindium and phosphine by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). The 77 K mobility of 131 000 cm2 /V s is the highest ever obtained by APOMVPE and among the highest ever measured for InP using any...

  • Growth and characterization of bulk InGaN films and quantum wells. Keller, S.; Keller, B.P. // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3147 

    Examines the indium gallium (InGaN) bulk layers and single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition on c-plane sapphire. Efficacy of the incorporation of indium into InGaN epitaxial layers; Observation of barrow and bright band edge related...

  • Conditioning of juvenile glass surfaces by atmospheric microwave plasma treatment. Negahdari, Zahra; Rosin, Andreas; Gerdes, Thorsten // Glass Technology: European Journal of Glass Science & Technology;Apr2012, Vol. 53 Issue 2, p39 

    Atmospheric pressure chemical vapour deposition processes (APCVD) are widely applied to hot juvenile glass surfaces, e.g. for on-line flat glass coating with transparent conductive oxides like tin oxides and FTO as well as for improvement of strength in container glass products. The temperature...

  • SURFACE FUNCTIONAUZATION OF POLYESTER FABRIC WITH ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION. Kale, Kiran H.; Palaskar, Shital S. // BTRA Scan;Jun2012, Vol. 42 Issue 2, p1 

    The article discusses an experiment on surface modification of polyester material with the use of the technology of atmospheric pressure plasma enhanced chemical vapour deposition. The use of atmospheric pressure plasma enhanced chemical vapour deposition has affected the physical, chemical and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics