TITLE

Measurement and evaluation of the interfacial thermal resistance between a metal and a dielectric

AUTHOR(S)
Heng-Chieh Chien; Da-Jeng Yao; Cheng-Ting Hsu
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p231910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We used a sandwiched film structure of dielectric, metal, and dielectric to measure and also to estimate theoretically the metal-dielectric interfacial thermal resistance. In this structure, a metal layer with a thickness of about 10 nm, including chromium, titanium, aluminum, nickel, and platinum, is sandwiched between two SiO2 layers with a thickness of 100 nm prepared by plasma enhanced chemical vapor deposition. The estimates, 10-10–10-9 m2 K W-1, calculated with a continuum two-fluid model are significantly smaller than the measured values, ∼10-8 m2 K W-1. The continuum two-fluid model, according to the phenomena of electron-phonon nonequilibrium near the interface in a metal, cannot explain completely the cause of this metal-dielectric interfacial thermal resistance. From photographs of the transmission electron microscopy cross section, we argue that defects at an interface likely play an important role in the magnitude of the interfacial thermal resistance.
ACCESSION #
35886508

 

Related Articles

  • Characterization and dielectric properties of β-SiC nanofibres. Yiming Yao; Jänis, Anna; Klement, Uta // Journal of Materials Science;Feb2008, Vol. 43 Issue 3, p1094 

    SiC nanofibres produced by chemical vapour reaction technique are investigated using scanning and transmission electron microscopy. The nanofibres have been found to have a crystalline core of β-SiC sheathed with thorn-like turbostratic carbon or amorphous Si/O/C, respectively. For this...

  • Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by.... Bohrer, J.; Krost, A. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1072 

    Presents the characteristics of normal InAlAs on InP and inverted InP on InAlAs interface developed by metalorganic chemical vapor deposition. Employment of transmission electron microscopy for comparison; Dissimilarities noted at both interfaces; Measurement of luminescence using a cooled Ge...

  • Step bunching mechanism in chemical vapor deposition of 6H-and 4H-SiC{0001}. Kimoto, Tsunenobu; Itoh, Akira // Journal of Applied Physics;4/15/1997, Vol. 81 Issue 8, p3494 

    Investigates step bunching in chemical vapor deposition of 6H- and 4H-SiC on off-oriented {0001} faces with cross-sectional transmission electron microscopy. Control of incorporation of N, Al, and B impurities by changing the C/Si ratio during CVD growth; Step bunching mechanism; Multiple-step...

  • Comparison of catalytically grown and arc-discharge carbon nanotube tips. Thie⁁n-Nga, Le⁁; Bonard, Jean-Marc; Ga´al, Richard; Forro´, La´szlo´; Hernadi, Klara // Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p850 

    We have performed a detailed transmission electron microscopy study of the tip of carbon nanotubes prepared by chemical vapor deposition (CVD) and by arc discharge. We found that a large proportion of the CVD-grown tubes have well-formed caps but that the graphitization of the walls is far from...

  • Fabrication and characterization of diamond film thermistors. Miyata, Koichi; Saito, Kimitsugu; Nishimura, Kozo; Kobashi, Koji // Review of Scientific Instruments;Dec1994, Vol. 65 Issue 12, p3799 

    Diamond film thermistors were fabricated from polycrystalline diamond films grown on sintered Si[sub 3]N[sub 4] by microwave plasma chemical vapor deposition. An undoped diamond layer and a zigzag or rectangular pattern of B-doped semiconducting diamond were successively deposited by a...

  • A frequency response and transient current study of ...-Ta2O5: Methods... Mattsson, M. Stromme; Niklasson, G. A. // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2185 

    Presents information on a study which dielectrically characterized ...-Ta2O5 samples made by chemical vapor deposition technique. Film preparation and characterization; Description of the electric measurements; Analysis of dielectric measurements; Conclusion.

  • Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene. Mafra, Daniela L.; Araujo, Paulo T. // Applied Sciences (2076-3417);Jun2014, Vol. 4 Issue 2, p207 

    This review focuses on intra- and interlayer (IL) electron-phonon interactions and phonon self-energy renormalizations in twisted and AB-stacked bilayer graphene (2LG) composed either only of 12C or a mixing of 12C and 13C isotopes. A simple way to imagine a 2LG is by placing one monolayer...

  • Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Brown, P. D.; Hails, J. E.; Russell, G. J.; Woods, J. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1144 

    The technique of cross-sectional transmission electron microscopy has been used to investigate the defect content of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Growth on {111} oriented substrates invaribly gave rise to...

  • In situ observation on electron-beam-induced chemical vapor deposition by transmission electron microscopy. Matsui, Shinji; Ichihashi, Toshinari // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p842 

    W deposition, using a WF6 source and electron-beam-induced surface reaction, has been studied by transmission electron microscopy (TEM). The initial growth process has been observed in situ by TEM. As a result, it became clear that β-W clusters are formed by electron beam irradiation of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics