Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO2

Savchyn, Oleksandr; Todi, Ravi M.; Coffey, Kevin R.; Kik, Pieter G.
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233120
Academic Journal
The dynamics of Er3+ excitation in low-temperature-annealed Si-rich SiO2 are studied. It is demonstrated that Si-excess-related indirect excitation is fast (transfer time τtr<27 ns) and occurs into higher lying Er3+ levels as well as directly into the first excited state (4I13/2). By monitoring the time-dependent Er3+ emission at 1535 nm, the multilevel nature of the Er3+ sensitization is shown to result in two types of excitation of the 4I13/2 state: a fast excitation process (τtr<27 ns) directly into the 4I13/2 level and a slow excitation process due to fast excitation into Er3+ levels above the 4I13/2 level, followed by internal Er3+ relaxation with a time constant τ32>2.3 μs. The fast and slow excitations of the 4I13/2 level account for an approximately equal fraction of the excitation events: 45%–50% and 50%–55%, respectively.


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