Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)

Song, J. Y.; Stingelin, N.; Gillin, W. P.; Kreouzis, T.
December 2008
Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233306
Academic Journal
The hole mobility in poly-(3-hexylthiophene) samples is measured by the dark injection transient technique in both hole only and ambipolar devices. By applying a small offset bias prior to the voltage step, electronic excited states are generated in the ambipolar but not in the hole only devices. The presence of excited states reduces the room temperature hole mobility (typically 5×10-5 cm2 V-1 s-1) by as much as 15% compared to that measured without offset, in contrast to the hole only devices where no significant mobility reduction is seen at the same, or indeed higher, current densities. We attribute the lower mobility to interactions between the charge carriers and the long lived triplet states and to an effective reduction in the number of transport sites available.


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