TITLE

Different electric-field dependences of geminate and nongeminate recombination in photoluminescence of a-Si:H

AUTHOR(S)
Aoki, Takeshi; Ohrui, Nobuaki; Fujihashi, Chugo; Shimakawa, Koichi
PUB. DATE
January 2009
SOURCE
Journal of Materials Science: Materials in Electronics;Jan2009 Supplement 1, Vol. 20, p125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this paper, we present the results of the wideband quadrature frequency-resolved spectroscopy (QFRS) of the electric-field ( F) effects on photoluminescence (PL) in a-Si:H: the recombination of geminate electron-hole pairs including excitons is quenched by an electric field, whereas that of nongeminate or distant pairs (DP) is enhanced. The quenching of the geminate recombination at intermediate temperatures is interpreted in terms of the classical Onsager theory. On the other hand, the enhancement of the DP recombination is explained using the effective temperature in diffusion-limited recombination.
ACCESSION #
35867203

 

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