Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Posilovic, K.; Kettler, T.; Shchukin, V. A.; Ledentsov, N. N.; Pohl, U. W.; Bimberg, D.; Fricke, J.; Ginolas, A.; Erbert, G.; Tränkle, G.; Jönsson, J.; Weyers, M.
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p221102
Academic Journal
One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum efficiencies of 93% and very narrow vertical beam divergence of 7.1° (full width at half maximum). 50 μm broad area lasers with unpassivated facets exhibit a high total output power of nearly 20 W in pulsed mode with a divergence of 9.5°×11.3° leading to a record brightness of 3×108 W cm-2 sr-1, being presently the best value ever reported for a single broad area laser diode. 100 μm broad devices with unpassivated facets show continuous wave operation with an output power of 1.9 W.


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