Ultrathin AlN/GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface

Onojima, Norio; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p223501
Academic Journal
We deposited Si atoms on the AlN barrier surface of an ultrathin AlN/GaN heterostructure field-effect transistor (HFET). This induced a remarkable change in the electrical properties of the two-dimensional electron gas. A 2-nm-thick Si layer reduced the sheet resistance of an AlN/GaN HFET (AlN barrier, 2 nm) from 60 356 to 388 Ω/sq. The effect on the Ohmic contact was also significant: the presence of an undermost layer of Si atoms under Ohmic contacts produced a low specific contact resistance of 1.7×10–6 Ω cm2. A 50-nm-gate AlN/GaN HFET with a Si layer exhibited excellent device characteristics with a current-gain cutoff frequency of 106 GHz.


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