TITLE

Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor

AUTHOR(S)
Mahadik, Nadeemullah A.; Qadri, Syed B.; Rao, Mulpuri V.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p222106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Localized strain in AlGaN/GaN high electron mobility transistor (HEMT) device structures was studied by high resolution x-ray diffraction and rocking curve measurements, and the results were compared with the corresponding channel sheet resistance measurements. The map of in-plane tensile strain on the HEMT wafer showed a near one-to-one correspondence with the electrical resistivity. The in-plane strain variation in the range of (2.295–3.539)×10-4 resulted in a corresponding sheet resistance variation between 345 and 411 Ω/□.
ACCESSION #
35763882

 

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