Tuning the tunnel coupling of quantum dot molecules with longitudinal magnetic fields

Climente, J. I.
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p223109
Academic Journal
We show that the energy splitting between the bonding and antibonding molecular states of holes in vertically stacked quantum dots can be tuned using longitudinal magnetic fields. With increasing field, the energy splitting first decreases to zero and then to negative values, which implies a bonding-to-antibonding ground state transition. This effect is a consequence of the enhancement of the valence band spin-orbit interaction induced by the magnetic field; it provides a flexible mechanism to switch the molecular ground state from bonding to antibonding.


Related Articles

  • Response to “Comment on ‘Field-controlled suppression of phonon-induced transitions in coupled quantum dots’ [Appl. Phys. Lett. 88, 4729 (2006)]”. Bertoni, Andrea; Rontani, Massimo; Goldoni, Guido; Troiani, Filippo; Molinari, Elisa // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p196102 

    The article offers a reply to a rejoinder on the paper "Field-Controlled Suppression of Phonon-Induced Transitions in Coupled Quantum Dots." The author has proposed in their paper that a reduction by orders of magnitude of the longitudinal-acoustic phonon-induced transition rate can be attained...

  • Density functional theory approach to artificial molecules. Partoens, Bart; Peeters, Franc¸ois M. // AIP Conference Proceedings;2001, Vol. 577 Issue 1, p128 

    Using the current spin density functional formalism we studied the ground state of two vertically coupled quantum dots as a function of the distance between both dots and the strength of an external perpendicular magnetic field. The tunneling between both dots is included. For zero magnetic...

  • Magnetic-Field-Induced Singularity in the Tunneling Current Through an InAs Quantum Dot. Khanin, Yu. N.; Vdovin, E. E. // JETP Letters;3/25/2005, Vol. 81 Issue 6, p267 

    The tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure with self-assembled InAs quantum dots is studied experimentally at low temperatures. An anomalous increase in the tunneling current through the quantum dots is observed in magnetic fields both parallel and...

  • Fermi edge singularity in II–VI semiconductor resonant tunneling structures. Rüth, M.; Slobodskyy, T.; Gould, C.; Schmidt, G.; Molenkamp, L. W. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p182104 

    We report on the observation of Fermi edge enhanced resonant tunneling transport in a II–VI semiconductor heterostructure. The resonant transport through a self-assembled CdSe quantum dot survives up to 45 K and probes a disordered two-dimensional-like emitter, which dominates the...

  • Magnetotunneling through stacked InAs/InGaAs/InP self-assembled quantum dots. Silva, A. G.; Guimarães, P. S. S.; Landi, S. M.; Pires, M. P.; Souza, P. L.; Vieira, G. S. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p757 

    We report an investigation of magnetotransport in stacked self-assembled quantum dot multi-layers, with applied magnetic fields up to 12 T parallel to the tunneling current. We observe tunneling between quantum dot states in adjacent layers and we show evidence of tunneling through Zeeman-split...

  • Magnetic-Field-Induced Valence Transition in EuNi[sub 2](Si[sub 1 — ][sub x]Ge[sub x])[sub 2] in Fields up to 500 T. Platonov, V. V.; Tatsenko, O. M.; Selemir, V. D.; Shiga, M. // Physics of the Solid State;Feb2002, Vol. 44 Issue 2, p315 

    The critical fields of the valence transition induced by a magnetic field in the EuNi[sub 2](Si[sub 1-x]Ge[sub x])[sub 2] (x = 0.5-0.75) compound in an intermediate valence state are measured. The magnetic-field-induced valence transition is observed in the low-concentration range down to x =...

  • Spin current through double quantum dots with spin- and time-dependent interdot coupling. Haixia Wang; Wen Yin; Fangwei Wang // Journal of Applied Physics;Mar2011, Vol. 109 Issue 5, p053710 

    We analyze theoretically the characteristics of electron transport through double quantum dots between which time oscillating and spin-polarization-dependent tunneling occurs. General formulas for the time-averaged current (spin current and charge current) and its differential are obtained by...

  • Enhancement of figure of merit in asymmetrically coupled double quantum dot system. Rajput, Gagan; Dixit, A.; Sharma, K. C. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p923 

    We theoretically study dimensionless figure of merit (FOM), which is used to measure thermoelectric efficiency, of double quantum dot (DQD) system coupled to metallic leads using Keldysh non-equilibrium Green function approach in the Coulomb blockade regime. It is found that asymmetry in...

  • Zeeman energy and anomalous spin splitting in lateral GaAs quantum dots. Val�n-Rodr�guez, M.; Puete, A.; Serra, Ll. // European Physical Journal B -- Condensed Matter;May2004, Vol. 39 Issue 1, p87 

    The level splittings induced by a horizontal magnetic field in a parabolic two-dimensional quantum dot with spin-orbit interaction are obtained. Characteristic features induced by the spin-orbit coupling are the appearance of zero-field gaps as well as energy splittings that depend on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics