Temperature dependence of the current conduction mechanisms in LaAlO3 thin films

Chang, Ingram Yin-Ku; Lee, Joseph Ya-Min
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p223503
Academic Journal
Metal-oxide-semiconductor capacitors and transistors with LaAlO3 dielectric films were fabricated and the current conduction mechanisms were studied. The LaAlO3 films remained amorphous with postdeposition annealing up to 1000 °C. The leakage current density was 8.3×10−5 A/cm2 at −1 V. The low leakage current was attributed to the high barrier height of Al/LaAlO3 interface. The Al/LaAlO3 barrier height and the effective electronic mass calculated from Schottky emission and Fowler–Nordheim tunneling were 1.12 eV and 0.27m0, respectively. The dominant conduction mechanism in the temperature range of 300 K


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