Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study

Yang, M.; Peng, G. W.; Wu, R. Q.; Deng, W. S.; Shen, L.; Chen, Q.; Feng, Y. P.; Chai, J. W.; Pan, J. S.; Wang, S. J.
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p222907
Academic Journal
We propose an interface model for Ge and its surface passivating nitride. The β-Ge3N4(0001)/Ge(111) interface structure does not have dangling bonds and is predicted to be exceptionally stable compared with other possible structures. Band offsets determined using x-ray photoemission spectroscopy study are in agreement with the prediction by first-principles calculations. The band offsets are large enough to minimize possible carrier tunneling.


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