TITLE

Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

AUTHOR(S)
Xu, Zong-Xiang; Xiang, Hai-Feng; Roy, V. A. L.; Chui, Stephen Sin-Yin; Che, Chi-Ming; Lai, P. T.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p223305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricated a field-effect transistor using micrometer-sized crystals (10–40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1 s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1×10-3 cm2 V-1 s-1).
ACCESSION #
35763858

 

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