TITLE

Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of 4H-SiC on (0001) vicinal surfaces under silicon-rich condition

AUTHOR(S)
Mochizuki, K.
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p222108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reported experimental results on homoepitaxial growth of 4H-SiC on (0001) Si-face vicinal surfaces under silicon-rich conditions in a SiH4–C3H8–H2 system are quantitatively analyzed according to the surface-diffusion theory dealing with step dynamics. The surface-diffusion length of C2H2 molecules, which are the main carbon-containing chemical species reacting with silicon adatoms on the surface, is determined to be 12–36 nm at 1500 °C. According to the two-dimensional nucleation theory using these values, the maximum growth rate for step-flow growth is estimated as a function of the off-angle of 4H-SiC substrates.
ACCESSION #
35763856

 

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