Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Liu, J. P.; Li, K.; Pandey, S. M.; Benistant, F. L.; See, A.; Zhou, M. S.; Hsia, L. C.; Schampers, Ruud; Klenov, Dmitri O.
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p221912
Academic Journal
We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.


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