Quantum resistance metrology in graphene

Giesbers, A. J. M.; Rietveld, G.; Houtzager, E.; Zeitler, U.; Yang, R.; Novoselov, K. S.; Geim, A. K.; Maan, J. C.
December 2008
Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p222109
Academic Journal
We performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall bar. The longitudinal resistivity in the center of the ν=±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ up to 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.


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