TITLE

Maximize Range in Mobile Handsets with CMOS-on- Sapphire RF Switches

AUTHOR(S)
Kelly, Dylan J.
PUB. DATE
October 2008
SOURCE
Portable Design;Oct/Nov2008, Vol. 14 Issue 10, p38
SOURCE TYPE
Periodical
DOC. TYPE
Article
ABSTRACT
The article offers information on the development of mobile handsets with CMOS-on-Sapphire RF Switches. It states that switch manufacturers are challenged to have a technology roadmap that will allow the accommodation of new bands and functionalities for next-generation phones. It notes that the CMOS-on-sapphire RF switches meet the challenge and is already available in single-pole, nine-throw (SP9T) configuration. It adds that it offers the benefits of high linearity and ease of design in the face of shrinking footprints.
ACCESSION #
35692192

 

Related Articles

  • It's Hot, Powering, And Burning CMOS Logic Circuits. LAUMEISTER, BILL // Electronic Design;3/8/2012, Vol. 60 Issue 3, p14 

    The article reports that engineers choose CMOS/biCMOS logic to be green and reduce power consumption. CMOS and biCMOS only draw power on transitions. Therefore those circuits run cool at slow speeds. It is stated that when the CMOS circuit is approximately midway between one and zero, both the...

  • Improving Yield and Defect Tolerance in Subthreshold CMOS Through Output-Wired Redundancy. Kristian Granhaug; Snorre Aunet // Journal of Electronic Testing;Jun2008, Vol. 24 Issue 1-3, p157 

    Abstract  This paper presents simulations of three different implementations of the minority-3 function, with special focus on mismatch analysis through statistical Monte Carlo-simulations. The simulations clearly favors the minority-3 Mirrored gate, and a gate-level redundancy...

  • A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers. Seongdo Kim; Janghong Choi; Joohyun Lee; Bontae Koo; Cheonsoo Kim; Nakwoong Eum; Hyunkyu Yu; Heebum Jung // ETRI Journal;Dec2011, Vol. 33 Issue 6, p969 

    This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-µm CMOS technology. The RF front-end achieves...

  • Post-complementary metal-oxide-semiconductor vertical and molecular transistors: A platform for molecular electronics. Mentovich, Elad D.; Richter, Shachar // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p033108 

    We demonstrate two types of post-complementary vertical-metal-insulator tunneling transistor in which a self-assembled monolayer is coupled to the channel of one of them. It is found that the properties of the molecular device are better than those of similar transistors in which these molecules...

  • Scan Test Response Compaction Combined with Diagnosis Capabilities. Sverre Wichlund; Frank Berntsen; Einar Aas // Journal of Electronic Testing;Jun2008, Vol. 24 Issue 1-3, p235 

    Abstract  As today’s process technologies are combined with ever increasing design sizes, the result is a dramatic increase in the number of scan test vectors that must be applied during manufacturing test. The increased chip complexities, in combination with the...

  • CMOS Yields Rugged, Fully Integrated 24-GHz Power Amplifier.  // Microwaves & RF;Oct2005, Vol. 44 Issue 10, p50 

    Focuses on complementary metal oxide semiconductor (CMOS) process technology. Description of the CMOS amplifier developed by Abbas Komijani, Arun Natarajan and Ali Hajimiri of the California Institute of Technology; Output power of the amplifier; Other features of the amplifier.

  • A low power clock generator with adaptive inter-phase charge balancing for variability compensation in 40-nm CMOS. Schulze, U.; Broich, M.; Weiss, O.; Noll, T. G. // Advances in Radio Science;2011, Vol. 9, p241 

    Power dissipation besides chip area is still one main optimization issue in high performance CMOS design. Regarding high throughput building blocks for digital signal processing architectures which are optimized down to the physical level a complementary two-phase clocking scheme (CTPC) is often...

  • Intel Debuts CMOS WLAN Transceiver.  // Electronic News;6/20/2005, Vol. 51 Issue 25, pN.PAG 

    Reports on the prototype of an all-complementary metal oxide semiconductor direct conversion dual-band radio transceiver developed by Intel Corp. capable of supporting every current Wi-Fi standard, 802.11a, b and g, as well as the emerging n standard. Information on the calibration scheme...

  • Adaptive Delta-Sigma Modulation for Enhanced Input Dynamic Range. Zierhofer, Clemens M. // EURASIP Journal on Advances in Signal Processing;2008, p1 

    An adaptive delta-sigma modulator of 1st order with one-bit quantization is presented. Adaptation is instantaneous and based on an exponential law. The feedback signal is a multibit discrete-level signal generated by a digital-to-analog converter (DAC). Compared to a nonadaptive delta-sigma...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics