An extremely high dielectric constant in bismuth-based pyrochlore multilayer film capacitors combined with percolative structure

Cuong, Nguyen Duy; Ahn, Jun-Ku; Park, Kyung-Woo; Seong, Nak-Jin; Yoon, Soon-Gil
November 2008
Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p212901
Academic Journal
The percolative film capacitor structure of Pt/Bi2Mg2/3Nb4/3O7 [BMN(Ar) films deposited at pure argon atmosphere]/Pt was addressed for achievement of a high dielectric constant in the films deposited at room temperature by radio frequency magnetron sputtering. The deterioration of the leakage current characteristics in the percolative capacitor was mitigated using the multilayer films of BMN(O)/BMN(Ar)/BMN(O), where ultrathin BMN(O) films were deposited at a mixed atmosphere of argon and oxygen. An extremely high dielectric constant of 120 and a low leakage current density of 6×10-6 A/cm2 at 3 V were observed in percolative BMN multilayer films as-deposited at room temperature.


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